ZXMN6A09KTC Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.15W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1426pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	40 mOhm @ 7.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7.7A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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IntroductionThe ZXMN6A09KTC is a N-channel enhancement mode MOSFET developed by Zetex Semiconductors, based on Silicon-on-Insulator (SOI) technology. This type of MOSFET has a low on-resistance and is designed to be used in applications where low voltage and high current are required. This type of MOSFET is commonly used in power management systems and current handling circuits.Application FieldThe low on-resistance of the ZXMN6A09KTC makes it well-suited for use as a switch in motor control systems, as it has the capability to switch large amounts of current with minimal power dissipation. It is also widely used in power MOSFET stages of DC/DC converters, resonant switching converters, buffer amplifier stages, RF amplifiers, and many other high-power applications.The device can also be used as a switching element in audio amplifiers, power amplifiers, power supplies and voltage regulator modules. The small size and low profile of the ZXMN6A09KTC also makes it ideal for applications where space is limited.Working PrincipleThe ZXMN6A09KTC is an enhancement-mode MOSFET and works with a gate-source voltage. When the gate-source voltage is positive, the gate-source voltage turns the transistor "on" and current flows. When the gate-source voltage is negative, the gate-source voltage turns the transistor "off" and current flow is stopped.The device consists of a source terminal, a drain terminal and a gate terminal. The source terminal is connected to the source of the circuit and the drain terminal is connected to the load. The gate terminal is connected to a voltage source, which provides a control voltage that can turn the transistor "on" and "off".The ZXMN6A09KTC also features a high input impedance, which enables it to drive high sources. The device also features a low output capacitance, which makes it ideal for high speed applications. In addition, the device features a low Rds(on), which allows for greater efficiency and lower power dissipation. The device also features fast turn-off, low thermal resistance and a low gate charge, which makes it an ideal choice for applications where high frequency and low power are requirements.ConclusionThe ZXMN6A09KTC is a N-channel enhancement-mode MOSFET designed for applications requiring low voltage, high current and high speed. This type of MOSFET is commonly used in power systems, current handling circuits and high-power applications. It has a low on-resistance, high input impedance, low output capacitance, low Rds(on), fast turn-off and low thermal resistance, making it ideal for applications where high frequency and low power are requirements.

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