ZXMN2A01E6TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN2A01E6TR-ND |
Manufacturer Part#: |
ZXMN2A01E6TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 2.44 A SOT-23-6 |
More Detail: | N-Channel 20V 2.5A (Ta) 1.1W (Ta) Surface Mount SO... |
DataSheet: | ZXMN2A01E6TA Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 303pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZXMN2A01E6TA is a type of Field Effect Transistor (FET) specifically classified as a single-poled Nanoelectromechanical System (NEMS) FET. Although FETs are a common type of transistor, the ZXMN2A01E6TA has a few advantages that make it a stand-out device in specific applications. It’s designed for use in industrial and automotive electronics and is built for easy mass-production.
A major advantage of the ZXMN2A01E6TA is its very low power dissipation. The FET requires only 0.7V and 11μA to operate, which allows it to be used in applications that need a high level of efficiency. This low power dissipation also means it can be used in applications that require long life, such as automotive, industrial and medical devices. In addition, the low power dissipation results in less heat, which reduces the chances of a device failing due to over-heating.
The ZXMN2A01E6TA also features a low on-resistance of 4.5Ω, which is significantly lower than typical MOSFETs. This low on-resistance allows the FET to operate with less power and increases efficiency. In addition, the low on-resistance reduces power losses, which helps to extend battery life and reduce overall system costs.
The ZXMN2A01E6TA is designed with a single gate that operates under a normal drain-source voltage. When a voltage is applied to the gate, an electric field is created between the gate and the channel. The electric field then controls the current flowing between the source and the drain. As the voltage increases, the electric field is increased, which increases current flow. Conversely, as voltage decreases, the electric field is decreased, thus reducing current flow. This type of FET is used in analog circuits and switching applications.
The ZXMN2A01E6TA offers several advantages that make it an ideal choice for various applications. Its low power dissipation allows it to be used in energy-conscious applications and its low on-resistance provides improved efficiency and reduced current losses. The FET is also easy to integrate into existing designs, making it a great choice for improving reliability and performance in a wide range of products.
The specific data is subject to PDF, and the above content is for reference
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