ZXMN0545G4TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN0545G4TR-ND |
Manufacturer Part#: |
ZXMN0545G4TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 450V 140MA SOT-223 |
More Detail: | N-Channel 450V 140mA (Ta) 2W (Ta) Surface Mount SO... |
DataSheet: | ZXMN0545G4TA Datasheet/PDF |
Quantity: | 20000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 70pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 Ohm @ 100mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 140mA (Ta) |
Drain to Source Voltage (Vdss): | 450V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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ZXMN0545G4TA is a type of FETs, or field-effect transistor, which is a semiconductor device with three pins and an insulated gate. FETs are commonly used to amplify or switch electronic signals and electrical power. As a specific device, the ZXMN0545G4TA is a N-channel enhancement mode MOSFET, meaning it is a voltage-controlled device with a single gate that has a higher current handling capacity than other types of FETs.
The ZXMN0545G4TA has a minimum drain drain-source voltage of 45V and a maximum drain current of 5A. This device can be used in many applications such as small-signal switching, voltage regulation, DC-DC power converters, load switch functions, and protection circuits. This part is also well-suited to use in high-speed switching applications due to its low switching losses.
The working principle behind the ZXMN0545G4TA is relatively simple, though its applications are more complex. FETs allow a small voltage, current, or signal to control a larger voltage, current, or signal. A voltage applied to the gate terminal of the ZXMN0545G4TA will control the current going through the drain and source terminals, which is known as controlling the source-drain current. This device is unique in that it is an N-channel enhancement mode MOSFET, meaning it will pass current only when a voltage is applied from the gate terminal to the source terminal.
When a voltage is applied from the gate terminal to the source terminal, the gate-source voltage (Vgs) turns the MOSFET on or off depending on the voltage level. This voltage is measured from the gate to the source. When Vgs = 0V, the FET is turned off. When Vgs > 0V (up to the maximum allowed for the specific device), the FET is turned on. When the voltage applied is more than the maximum, it is known as an overdrive condition, and can cause damage to the device.
The ZXMN0545G4TA can be used in many different applications due to its benefits. It is well-priced, offers high power efficiency, and can act as an efficient switch at high frequencies. Its high current rating also makes it suitable for a variety of applications that require switching high power. It is commonly used in automotive applications, such as engine control units, as well as audio amplifiers and power supplies.
In summary, the ZXMN0545G4TA is an N-channel enhancement mode MOSFET designed for efficient switching and power control applications. It has a drain-source voltage of 45V and a maximum drain current of 5A. The device is suitable for use in applications such as small-signal switching, voltage regulation, DC-DC power converters, load switch functions, and protection circuits. Its working principle is based on the idea of controlling the source-drain current by applying a gate-source voltage.
The specific data is subject to PDF, and the above content is for reference
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