
Allicdata Part #: | BSS816NWH6327XTSA1TR-ND |
Manufacturer Part#: |
BSS816NWH6327XTSA1 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 1.4A SOT323 |
More Detail: | N-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount P... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.04883 |
Vgs(th) (Max) @ Id: | 0.75V @ 3.7µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.6nC @ 2.5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.4A, 2.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 2.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSS816NWH6327XTSA1 is a type of single N-channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). The device is designed for the purpose of low-voltage drive and offers a maximum drain voltage of 20V.
The structure of single MOSFETs consists of three terminals (or pins): the gate, the drain and the source. The gate terminal is used to control the current flow between the drain and the source by providing a voltage signal. The basic principle of a MOSFET is that the voltage applied between gate and source will control the conductivity between drain and source. As the voltage increase the conductivity increases in proportion and the current flowing between the two terminals increases.
The BSS816NWH6327XTSA1 is a particularly well-suited device for power working, with a high-temperature rating up to 175°C. It has a high input impedance and due to its N-channel architecture also a fast switching speed of 60V/ns, consequently decreasing the switching times.
BSS816NWH6327XTSA1’s application fields are very versatile, making it a highly desirable device for many electronic designs. It is particularly suitable for aperture control circuits, motor drive circuits, motor controllers, LED drivers and LCD drivers. By optimizing the design parameters, the device can be successfully applied even to power drivers and advance power switch technology.
To make sure that the device is used safely and efficiently, specific precautions should always be taken. It is important to evaluate the parasitic capacitances in relation to the load capacitances and drain-source voltage. As this will affect the transient response of the circuit, it is also essential to assure that the maximum drain-source voltage is not exceeded as well as the integrity of the maximum drain current.
In conclusion, BSS816NWH6327XTSA1 is a single N-channel MOSFET capable of performing effectively at high temperatures, with a maximum drain voltage of 20V and switching speed of 60V/ns. Its application fields include aperture control circuits, motor drive circuits, motor controllers, LED drivers, and LCD drivers. Taking the proper precautions into account, the device can be safely used for various electronic designs.
The specific data is subject to PDF, and the above content is for reference
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