BSS816NWH6327XTSA1 Allicdata Electronics
Allicdata Part #:

BSS816NWH6327XTSA1TR-ND

Manufacturer Part#:

BSS816NWH6327XTSA1

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 1.4A SOT323
More Detail: N-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount P...
DataSheet: BSS816NWH6327XTSA1 datasheetBSS816NWH6327XTSA1 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04883
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id: 0.75V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 2.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
FET Feature: --
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT323-3
Package / Case: SC-70, SOT-323
Series: OptiMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Description

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BSS816NWH6327XTSA1 is a type of single N-channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). The device is designed for the purpose of low-voltage drive and offers a maximum drain voltage of 20V.

The structure of single MOSFETs consists of three terminals (or pins): the gate, the drain and the source. The gate terminal is used to control the current flow between the drain and the source by providing a voltage signal. The basic principle of a MOSFET is that the voltage applied between gate and source will control the conductivity between drain and source. As the voltage increase the conductivity increases in proportion and the current flowing between the two terminals increases.

The BSS816NWH6327XTSA1 is a particularly well-suited device for power working, with a high-temperature rating up to 175°C. It has a high input impedance and due to its N-channel architecture also a fast switching speed of 60V/ns, consequently decreasing the switching times.

BSS816NWH6327XTSA1’s application fields are very versatile, making it a highly desirable device for many electronic designs. It is particularly suitable for aperture control circuits, motor drive circuits, motor controllers, LED drivers and LCD drivers. By optimizing the design parameters, the device can be successfully applied even to power drivers and advance power switch technology.

To make sure that the device is used safely and efficiently, specific precautions should always be taken. It is important to evaluate the parasitic capacitances in relation to the load capacitances and drain-source voltage. As this will affect the transient response of the circuit, it is also essential to assure that the maximum drain-source voltage is not exceeded as well as the integrity of the maximum drain current.

In conclusion, BSS816NWH6327XTSA1 is a single N-channel MOSFET capable of performing effectively at high temperatures, with a maximum drain voltage of 20V and switching speed of 60V/ns. Its application fields include aperture control circuits, motor drive circuits, motor controllers, LED drivers, and LCD drivers. Taking the proper precautions into account, the device can be safely used for various electronic designs.

The specific data is subject to PDF, and the above content is for reference

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