BSS84PW Discrete Semiconductor Products |
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Allicdata Part #: | BSS84PWINTR-ND |
Manufacturer Part#: |
BSS84PW |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 150MA SOT-323 |
More Detail: | P-Channel 60V 150mA (Ta) 300mW (Ta) Surface Mount ... |
DataSheet: | BSS84PW Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 150mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: | 2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 19.1pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 300mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-SOT323-3 |
Package / Case: | SC-70, SOT-323 |
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BSS84PW: Application Field and Working Principle
The BSS84PW is one of the most popular single field effect transistor (FET) type with metal oxide semiconductor operations, popularly known as MOSFET. The BSS84PW comes with a built-in E/D zone and a pair of terminals, making it a robust and reliable component for many different applications, including power amplifiers, switching power supplies, motor control and general voltage-variable switches. The following sections aptly explain the application field and the working principle of the BSS84PW.
Application Field
The BSS84PW is most commonly used in power amplification due to its robust nature, as it provides a high degree of linearity, thereby ensuring maximum efficiency and reliable performance. This component also offers improved speed characteristics due to the presence of low-on-state resistance, making it a suitable option for developing high-fidelity audio systems, power amplifiers working on digital audio component, and home theatre amplifiers. Further, the component is also suitable for developing a power-switching supply, particularly where cascading of two power supplies are necessary for delivering high output voltage. The component is well-suited for use in switched-mode power supplies too, as it offers good high-frequency performance, as well as allowing current latching. Therefore, the component is often used to construct switching power-assuming hookups and other such purposes. Lastly, the component can be used within motor control circuits, making it a versatile component suitable for a wide range of applications.
Working Principles
In a single MOSFET, the source electrode is connected to the drain electrode and the grid is connected to the gate electrode, which controls the current flow between the two. The most fundamental working principle of the BSS84PW is that the voltage applied to the gate current changes the resistance of the channel through the MOSFET, allowing the circuit-control current to flow between the source and drain of the component. This change in channel resistance occurs due to the fact that when voltage is applied to the gate, the mobile electrons that form the channel can be attracted to the gate, thus modifying the resistance of the channel. If the gate-source resistance is low, the current flowing between the source and the drain will be high, while when the resistance is higher, the current flow will be reduced accordingly. This is the underlying operating principle on which the BSS84PW works.
Conclusion
In conclusion, the BSS84PW is a single MOSFET that is suitable for a wide range of applications, from power amplification and power-switching supply to motor control circuits. The component is beneficial in terms of its real-world performance, thanks to its low-on-state resistance, which enables high speed operations, as well as its robust construction, which ensures improved linearity and excellent high-frequency performance. The underlying operating principle of the component is also adequately explained, as the resistance of the channel, between the source and the drain, can be modified through the application of voltage to the gate.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BSS84PL6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 170MA SOT... |
BSS84PW L6327 | Infineon Tec... | -- | 1000 | MOSFET P-CH 60V 150MA SOT... |
BSS84AKT,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET P-CH 50V SC-75P-Ch... |
BSS84TA | Diodes Incor... | -- | 1000 | MOSFET P-CH 50V 130MA SOT... |
BSS84_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 50V 130MA SOT... |
BSS84TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET P-CH 50V 0.13A SOT... |
BSS87E6327T | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 240V 260MA SO... |
BSS84P E6433 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 170MA SOT... |
BSS87 E6433 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 240V 260MA SO... |
BSS84-7 | Diodes Incor... | -- | 1000 | MOSFET P-CH 50V 130MA SOT... |
BSS84W-7 | Diodes Incor... | -- | 1000 | MOSFET P-CH 50V 130MA SC7... |
BSS84P-E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 170MA SOT... |
BSS87E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 240V 260MA SO... |
BSS83PE6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 330MA SOT... |
BSS84LT1 | ON Semicondu... | -- | 1000 | MOSFET P-CH 50V 130MA SOT... |
BSS83PL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 330MA SOT... |
BSS806NL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 2.3A SOT2... |
BSS816NW L6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 1.4A SOT3... |
BSS84PH6327XTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 0.17A SOT... |
BSS84AK-BR | Nexperia USA... | 0.0 $ | 1000 | MOSFET P-CH 50V 180MA TO2... |
BSS84AKW-BX | Nexperia USA... | 0.0 $ | 1000 | MOSFET P-CHANNEL 50V 150M... |
BSS84AK,215 | Nexperia USA... | 0.06 $ | 1000 | MOSFET P-CH 50V TO-236ABP... |
BSS84,215 | Nexperia USA... | 0.05 $ | 1000 | MOSFET P-CH 50V 130MA SOT... |
BSS87,115 | Nexperia USA... | 0.14 $ | 1000 | MOSFET N-CH 200V 400MA SO... |
BSS84AKVL | Nexperia USA... | 0.03 $ | 1000 | MOSFET P-CH 50V 180MA TO2... |
BSS816NWH6327XTSA1 | Infineon Tec... | 0.06 $ | 1000 | MOSFET N-CH 20V 1.4A SOT3... |
BSS87H6327FTSA1 | Infineon Tec... | 0.14 $ | 2000 | MOSFET N-CH 240V 260MA SO... |
BSS84-7-F | Diodes Incor... | -- | 1000 | MOSFET P-CH 50V 130MA SOT... |
BSS84PH6433XTMA1 | Infineon Tec... | 0.04 $ | 1000 | MOSFET P-CH 60V 170MA SOT... |
BSS84 | ON Semicondu... | -- | 50000 | MOSFET P-CH 50V 130MA SOT... |
BSS84PH6327XTSA2 | Infineon Tec... | -- | 1000 | MOSFET P-CH 60V 170MA SOT... |
BSS84LT1G | ON Semicondu... | -- | 42000 | MOSFET P-CH 50V 130MA SOT... |
BSS83PH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET P-CH 60V 0.33A SOT... |
BSS84AKS/ZLX | Nexperia USA... | 0.0 $ | 1000 | MOSFET 2 P-CH 50V 160MA 6... |
BSS84PL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 170MA SOT... |
BSS84PW | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 150MA SOT... |
BSS87L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 240V 260MA SO... |
BSS84DW-7 | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2P-CH 50V 0.13A SC... |
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