DMN10H120SFG-13 Allicdata Electronics

DMN10H120SFG-13 Discrete Semiconductor Products

Allicdata Part #:

DMN10H120SFG-13DITR-ND

Manufacturer Part#:

DMN10H120SFG-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 100V 3.8A POWERDI
More Detail: N-Channel 100V 3.8A (Ta) 1W (Ta) Surface Mount Pow...
DataSheet: DMN10H120SFG-13 datasheetDMN10H120SFG-13 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Base Part Number: DMN10H120
Package / Case: 8-PowerWDFN
Supplier Device Package: PowerDI3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 549pF @ 50V
Vgs (Max): ±20V
Series: --
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN10H120SFG-13 is a MOSFET (short for metal-oxide-semiconductor field-effect transistor) that can be used for various purposes. It is a single MOSFET that is commonly used in power applications, particularly in motor control and power switches. It has an excellent efficiency, low on-resistance, and wide range of applications. This article will discuss the application field and working principle of the DMN10H120SFG-13.

The DMN10H120SFG-13 has a low threshold voltage and high-temperature operating characteristics. It is suitable for a variety of switching applications, such as high-side switches, low-side switches, OR-ing switches, and other similar applications. It is also suitable for use in SMPS (switched-mode power supply) and DCDC (direct current-direct current) converters. Its low on-resistance is ideal for power applications, as it eliminates the need for additional active components. Additionally, the DMN10H120SFG-13 has an integrated gate-drain-source ESD (electrostatic discharge) protection that prevents malfunction of circuits in the event of sudden voltage changes.

The working principle of the DMN10H120SFG-13 is based on MOSFET technology. It operates on the principle of controlling the flow of current between the gate and drain terminal by applying the appropriate gate signal. The gate signal is provided by the external circuit. The DMN10H120SFG-13 is an N-channel MOSFET and has a low threshold voltage. When the gate voltage is applied, it causes the N-channel to turn on and the current will flow from the drain to the source terminal. The current will continue to flow as long as there is an externally applied voltage.

In addition to its power applications, the DMN10H120SFG-13 is also used in RF (radio frequency) switching applications. It is capable of providing fast on/off switching and excellent frequency isolation. The MOSFET can be used in a variety of frequencies, including ultra-high frequency (UHF), microwave, and mobile communication. It is also used in audio amplifiers and active filters. The DMN10H120SFG-13 can also be used in automotive applications, such as motor control and engine control.

The DMN10H120SFG-13 is a robust and reliable MOSFET that can be used in a wide range of switching and power applications. It has an integrated gate-drain-source ESD protection to prevent malfunctions, a low threshold voltage, and high-temperature operating characteristics. It is suitable for power switching, RF switching, motor control, vehicle electronics, audio amplifiers, and active filters.

The specific data is subject to PDF, and the above content is for reference

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