FDD8424H_F085 Allicdata Electronics
Allicdata Part #:

FDD8424H_F085TR-ND

Manufacturer Part#:

FDD8424H_F085

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N/P-CH 40V 9A/6.5A DPAK
More Detail: Mosfet Array N and P-Channel 40V 9A, 6.5A 1.3W Sur...
DataSheet: FDD8424H_F085 datasheetFDD8424H_F085 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L
Base Part Number: FDD8424
Description

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The FDD8424H_F085 is an array of logic MOSFETs that can be used in a range of applications. This device is designed to provide an improved level of signal integrity through the use of very low leakage current and a low dielectric breakdown voltage. This makes it ideal for use in applications where reliable signal transmission is of utmost importance such as switchgear circuits, HVAC applications and other similar applications.

The FDD8424H_F085 is made up of a number of low-power MOSFETs arranged in a continuous array. This array provides a low resistance path between the two terminals of the device, which allows for high speed signal transmission. The device also has a wide range of input voltage capabilities which makes it suitable for use in a variety of different circuits.

The device works by controlling the flow of electrical current by utilizing the specific characteristics of each MOSFET. When a voltage is applied to the input of the device, the applied voltage is converted into some type of digital signal. This signal is then processed by the device and the current is allowed to flow or be blocked as determined by the voltage. This allows the device to be used as a switch or a signal conditioning device.

The FDD8424H_F085 can be used in a wide variety of applications that require high voltage, high speed, and low noise operation. This includes, but is not limited to, high-voltage switching and power distribution control, circuit protection, low power medical devices and communications. Its low on-state resistance makes it an ideal choice for high speed switching applications, while its low leakage current makes it well suited for use in power circuits where noise and EMI must be minimized.

The FDD8424H_F085 has a wide variety of features that make it a truly versatile device. These features include an adjustable gate threshold voltage, an adjustable peak gate-source voltage, and an adjustable gate-source capacitance. By taking advantage of these features, the device can be configured for a range of applications. Furthermore, due to its low on-state resistance, the FDD8424H_F085 can be used in applications that require high speed switching.

In conclusion, the FDD8424H_F085 is an array of low-power MOSFETs that can be used in a variety of applications to provide a reliable level of signal integrity. It has a wide range of input voltage capabilities and adjustable characteristics that make it an ideal choice for many high voltage, high speed, and low noise switching applications. Furthermore, its low on-state resistance allows for high speed switching and its low leakage current minimizes noise and EMI. For these reasons, the FDD8424H_F085 is an ideal solution for many electrical applications.

The specific data is subject to PDF, and the above content is for reference

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