
FDD86326 Discrete Semiconductor Products |
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Allicdata Part #: | FDD86326TR-ND |
Manufacturer Part#: |
FDD86326 |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V TRENCH DPAK |
More Detail: | N-Channel 80V 8A (Ta), 37A (Tc) 3.1W (Ta), 62W (Tc... |
DataSheet: | ![]() |
Quantity: | 2500 |
1 +: | $ 0.60000 |
10 +: | $ 0.58200 |
100 +: | $ 0.57000 |
1000 +: | $ 0.55800 |
10000 +: | $ 0.54000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 62W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1035pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta), 37A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDD86326 is one of the MOSFETs (metal–oxide–semiconductor field-effect transistor) family, single devices. It is intended for use as a discrete power transistor in a variety of on-state applications, such as a PWM (pulse-width modulation) circuit that regulates the voltage within a given range. Its main field of application is in high-frequency switching applications, and it is known for its fast-switching capabilities.
Generally speaking, the FDD86326 is used for current control and power switching in high frequency applications, such as in high-speed switching circuits, DC-to-DC converters, and voltage multipliers. It is also suitable for DC motor control and as a rectifier as well. The FDD86326 is also used in applications with high-frequency switching, sensing, and drive circuits. It is optimized for switching applications in digital logic and analog circuits.
Besides that, FDD86326 can also be utilized at high frequency latching power circuits like those used in switch-mode digital power supplies. It is most commonly used in low voltage subsystems in order to switch and control the current with maximum efficiency. When used in this way, it can result in significant savings in energy costs.
As with all MOSFETs, the FDD86326 comprises of a source, a drain and a channel region that is connected to a gate terminal. The drain and the source are made up of doped semiconductor material. When a voltage is applied to the gate terminal, it creates an electric field that modulates the conductivity of the channel region between them. This allows current to flow or not flow, depending on the amount of voltage applied.
The FDD86326 works with a voltage range of 4.5V to 12V, and a gate voltage between 0V and 12V. Its drain-to-source current is capable of passing up to 40A, and can operate at frequencies from 45MHz to 150MHz. It also has a maximum drain-to-source voltage rating of 100V and can handle up to 10W of power with a dielectric strength rating of 500V.
The FDD86326 achieves a fast switching operation, making it suitable for digital circuits. It also features low on-resistance, which is an important factor when it comes to fast switching. In addition to this, it has very low gate to source capacitance and low internal power dissipation. This means that it has low power losses when it is being constantly switched.
The FDD86326 is designed to provide the user with the tools to build improved and efficient power systems, as it can switch large currents and high voltages in a short amount of time. The low capacitance and low power dissipation of the device also help to reduce power losses. The fast switching speeds and low on-resistance of the device make it ideal for any on-state switching application.
The specific data is subject to PDF, and the above content is for reference
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