FDD86250 Discrete Semiconductor Products |
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Allicdata Part #: | FDD86250TR-ND |
Manufacturer Part#: |
FDD86250 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 8A DPAK |
More Detail: | N-Channel 150V 8A (Ta), 50A (Tc) 3.1W (Ta), 132W (... |
DataSheet: | FDD86250 Datasheet/PDF |
Quantity: | 548 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 132W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2110pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta), 50A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDD86250 is a N-channel enhancement mode field effect transistor (FET). It is a type of single MOSFET which has a single gate between two current carrying terminals, also known as the drain and the source. The semiconductor material used in FDD86250 is mainly silicon which is the most common material used in the fabrication of integrated circuits and transistors.
As with the majority of MOSFETs, the FDD86250 operates according to the principle of an electrostatic field. This means that the source and drain terminals are connected to a voltage source, such that when these two terminals are connected, a voltage is applied across them and an electric field is created between them.
The electric field allows for current to flow between the two terminals. The gate terminal of the FDD86250 is the main input control of this current. The main advantage of the FDD86250 is the extremely low input power required for operation. This makes it ideal for use in low power applications, such as switching and logic applications, where the power requirements are extremely low.
The FDD86250 is most commonly used in switching applications, as it can easily switch between an open and a closed state. This can be achieved by simply applying a voltage to the gate terminal, which will then in turn control the flow of current through the transistor. This means that the FDD86250 can be used to control the flow of current through a device, such as a motor or a solenoid.
The FDD86250 can also be used in logic applications, as it is capable of performing basic logic operations such as AND and OR operations. This makes it particularly useful for complex logic applications, where multiple logic operations need to be performed.
The FDD86250 is a versatile device and is well suited for use in a wide range of applications. It is used in a variety of consumer electronics and industrial equipment, and is an important component of many integrated circuits.
In summary, the FDD86250 is an N-channel enhancement mode field effect transistor (FET) used mainly for switching and logic applications. It is particularly useful for low power applications, as it requires very little power for operation. It is a single MOSFET which makes it ideal for complex logic operations, and is commonly used in consumer electronics and industrial equipment.
The specific data is subject to PDF, and the above content is for reference
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