FDD8896 Allicdata Electronics
Allicdata Part #:

FDD8896TR-ND

Manufacturer Part#:

FDD8896

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 94A DPAK
More Detail: N-Channel 30V 17A (Ta), 94A (Tc) 80W (Tc) Surface ...
DataSheet: FDD8896 datasheetFDD8896 Datasheet/PDF
Quantity: 12500
1 +: $ 0.25000
10 +: $ 0.24250
100 +: $ 0.23750
1000 +: $ 0.23250
10000 +: $ 0.22500
Stock 12500Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDD8896 is a type of Field Effect Transistor (FET). It is a single transistor with one gate, source and drain. FDD8896s are commonly used in a variety of applications including power switching, amplification, signal buffering, and control.

FDD8896s are manufactured using the Metal Oxide Semiconductor (MOS) technology. This technology utilizes a layer of gate material that is connected to the source and drain regions of the transistor. When a voltage is applied to the gate, a field effect is created which then modifies the flow of current from the source to the drain.

The FDD8896 has a wide range of applications. It can be used for power switching, which involves switching off and on the power supply to a device. It can also be used for signal buffering, which is the process of reducing noise, signal distortion, or leakage. It can be used for signal amplification, which is necessary to increase the power of signals. Finally, it can be used for control, which allows it to be used as a trigger in controlling something else.

When it comes to the working principle of the FDD8896, it is based on the properties of the MOS transistor. The FDD8896 is activated by the voltage applied to the gate. This voltage creates an electric field, which then affects the flow of current. Depending on the voltage applied, the current flow can either be increased or decreased.

The FDD8896 is constructed with a P-type source and drain, and an N-type gate. When the voltage is applied to the gate, it creates an electric field which then affects the flow of current from the source and drain. At low voltages, the current flow from the source and drain increases. As the voltage increases, the resistance of the gate also increases, and the current flow decreases.

The FDD8896\'s wide range of applications and working principles make it a very useful tool in a variety of electronic circuits and systems. It can be used for power switching, signal buffering, signal amplification, and control. It is manufactured using the Metal Oxide Semiconductor technology and is easily integrated into many different projects. Overall, the FDD8896 is an essential tool that you should consider using in your next electrical or electronic project.

The specific data is subject to PDF, and the above content is for reference

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