FDD8750 Discrete Semiconductor Products |
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Allicdata Part #: | FDD8750TR-ND |
Manufacturer Part#: |
FDD8750 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 6.5A DPAK |
More Detail: | N-Channel 25V 6.5A (Ta), 2.7A (Tc) 3.7W (Ta), 18W ... |
DataSheet: | FDD8750 Datasheet/PDF |
Quantity: | 1000 |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 425pF @ 13V |
FET Feature: | -- |
Power Dissipation (Max): | 3.7W (Ta), 18W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta), 2.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
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The FDD8750 is an N-Channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with an electric field operating principle. This field effect transistor is designed for power management applications, where a high current flow is required. It has a low threshold voltage and therefore can deliver a fast switching time, making it ideal for power amplifier design. The FDD8750 provides superior performance in terms of thermal resistance between the FET and the connected semiconductor device. It is available in a surface-mount version.
The FDD8750 is commonly used in AC or DC power supplies and related devices. It is also used in the power input and output of LED drivers, audio amplifiers, and other consumer electronics. It is also well-suited for DC applications, such as DC motors, relays and solenoids. The FDD8750 has low gate-source capacitance and low on-resistance, making it suitable for use in high-switching frequency applications, such as PWM (Pulse Width Modulation).
The working principle of the FDD8750 is based on the electric field effect. In an Electric Field Effect Transistor (EFET), a voltage applied to the gate terminal produces an electric field, which in turn modulates the current flowing through the channel. If an appropriate voltage is applied to the gate terminal, the electrons present in the channel are attracted towards the gate, resulting in an increase in current flow. The device will then act as a switch.
The FDD8750 is designed for use in demanding power management applications, where high current flow and rapid switching are necessary. It has low gate-source capacitance and offers superior thermal performance when compared to other MOSFETs. The FDD8750 is available in a surface-mount version, which is ideal for applications where space is at a premium.
In summary, the FDD8750 is an N-Channel MOSFET which is designed for power management applications. It features a low threshold voltage, rapid switching time, low gate-source capacitance, and low on-resistance. The FDD8750 is suitable for use in high-switching frequency applications and is available in a surface-mount version for space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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