Allicdata Part #: | FDD8876TR-ND |
Manufacturer Part#: |
FDD8876 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 73A D-PAK |
More Detail: | N-Channel 30V 15A (Ta), 73A (Tc) 70W (Tc) Surface ... |
DataSheet: | FDD8876 Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 73A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 70W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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FDD8876 is a kind of enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor) developed by Fairchild Semiconductor Corporation. It is a wide bandgap, low voltage, low on-resistance, high frequency, and low capacitance device. It is well-suited for a variety of low voltage applications, such as automotive and portable electronics, as well as high temperature applications.
The FDD8876 is a single-walled, balanced, symmetrical device, with a gate-source voltage range of -6V to -20V, and an on-resistance of 8Ω. It has an integrated heat sink, allowing it to operate at high temperatures without thermal limitations. The internal body diode can be used to protect against accidental high voltage transients.
FDD8876 is an ideal choice for applications such as low voltage DC/DC converters, high-density power management, light dimming and switch-mode power applications. It can be used for high speed switching, load regulation, over-voltage protection and power regulation. It is also suitable for high frequency switch mode power supplies, and switching power supplies.
The working principle of FDD8876 is based on the fact that, when a positive voltage is applied between the gate and the source of the MOSFET, it will turn on, allowing current to pass through, while a negative voltage will turn it off. This is known as the “enhancement mode”, and is used to control the current passing through the device.
When a voltage is applied across the gate and source of the FDD8876, it will induce a potential drop across the device and create an electric field. This electric field is what allows the current to pass through and activate the transistor. The amount of current passing through the FDD8876 depends on voltage applied across the gate and source, as well as the device’s on-resistance, or “gate-source” resistance.
The FDD8876 is a low voltage device and is able to operate up to 20V, making it suitable for a variety of applications. It has a high frequency performance and is ideal for high frequency switching applications. It also features a low on-resistance, allowing for high efficiency operation.
In conclusion, FDD8876 is an ideal choice for applications that require low voltage, low on-resistance, high frequency, and low capacitance. It is well suited for automotive and portable electronics applications, as well as for high temperature applications. Its built-in heat sink and integrated body diode provide reliable and robust performance.
The specific data is subject to PDF, and the above content is for reference
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