FDD86380-F085 Allicdata Electronics

FDD86380-F085 Discrete Semiconductor Products

Allicdata Part #:

FDD86380-F085TR-ND

Manufacturer Part#:

FDD86380-F085

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 50A DPAK
More Detail: N-Channel 80V 50A (Tc) 75W (Tj) Surface Mount D-PA...
DataSheet: FDD86380-F085 datasheetFDD86380-F085 Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 75W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDD86380-F085 is an insurance field-effect transistor (InsFET) belongs to a family of transistors known as InsFETs. It is one of the latest generations of high-performance InsFETs, designed for applications where the voltage rating is 70V and current rating is 75A. The FDD86380-F085 is optimized for high-current and high-power switching applications and has an integrated gate driver that enables faster operation.

InsFETs, or insulated-gate field-effect transistors, are a type of field-effect transistor (FET) in which the gate of the transistor is insulated from the source and drain regions by a dielectric layer. This insulation layer allows a much higher voltage to be applied to the gate in order to control the flow of current through the transistor. As a result, InsFETs have the advantage of higher voltage ratings and improved switching speed compared to other FETs. This makes them ideal for high-current and high-power applications.

The FDD86380-F085’s structure includes a high-voltage, high-current InsFET integrated with a gate driver and a charge pump. The gate driver is a low-power cmos circuit which is used to drive the transistor between two states. It provides a low-voltage output to the gate of the transistor in order to turn the device on and off. The charge pump circuit is used to provide a high-voltage charge to the transistor’s gate in order to keep it in the “on” state.

The working principle of the FDD86380-F085 can be understood in terms of an electric field. When a voltage is applied to the drain and source terminals of the InsFET, an electric field is created within the device. This electric field results in a flow of electrons between the source and drain, which is known as current flow. The magnitude of the current flow is controlled by the gate voltage applied to the transistor. By adjusting the voltage applied to the gate of the transistor, its resistance to the current flow can be increased or decreased, which results in higher or lower power output from the transistor.

The FDD86380-F085 is suitable for use in high-current and high-power switching applications such as electronic motor drives, DC-DC converters and lighting dimmers. Its advanced high-voltage gate driver and integrated charge pump enable faster switching times, which leads to improved efficiency and performance in high-power applications.

In summary, the FDD86380-F085 is an advanced insurance field-effect transistor optimized for high-current and high-power applications. Its integrated gate driver and charge pump allow for faster switching times and higher efficiency compared to other FETs. It is suitable for use in a variety of applications such as electronic motor drives, DC-DC converters and lighting dimmers.

The specific data is subject to PDF, and the above content is for reference

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