FDD850N10L Discrete Semiconductor Products

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Field-effect transistors (FETs) are two-terminal solid-state semiconductor devices. These devices operate on the principle of an electric field and are designated as either N-type or P-type. FETs are used in amplifiers, switches, and control and signal circuits.

The FDD850N10L is an N-channel enhancement-mode insulated-gate field-effect transistor (IGFET) designed for power switching applications. The device is manufactured using advanced CMOS processes, and provides high performance and reliability in a very small package.

The FDD850N10L transistor utilizes depletion-mode or enhancement-mode transistor technology, and this can be determined by looking at the schematic symbol. In the FDD850N10L, the source (S) and drain (D) are terminated to the gate (G), and the control of current flow is obtained by the application of a gate voltage. If the gate voltage is equal to or larger than the source voltage, then current begins to flow between the drain and source. In the FDD850N10L, the device is considered to be in the enhancement mode, as the source is connected to ground.

The FDD850N10L is designed for use in high power applications, such as motor control, power supply, and power distribution. The device provides a breakdown voltage of up to 750 Volts, a peak drain/source voltage of 800 Volts and a maximum drain current of 10 Amps. The device also features a low on-state resistance and a low input capacitance.

In terms of operation, the FDD850N10L operates in much the same way as other FETs. Saturation of the channel type is determined by the gate voltage and is used for control purposes. When the gate voltage (Vgs) surpasses the threshold voltage (Vth), the device enters its saturation region, in which the drain current (Id) is increased as the drain voltage is increased. The device is turned off by applying a positive gate voltage to counteract the positive charge created by the current flow.

The FDD850N10L device is designed for high speed switching applications and can be used for high frequency switching applications. It offers low switching losses, as well as low power losses. It has also been designed with short circuit protection, which helps to prevent malfunctioning or destruction of the device at high currents or voltages.

The FDD850N10L is a versatile power MOSFET, ideal for applications where high power handling is required. Its small size, low power loss, high speed switching, and low on-state resistance make it an ideal choice for many applications. It is reliable, efficient, and easy to use, making it a popular choice among engineers and power system design engineers.

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