FDD86250-F085

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FDD86250-F085 is a very robust, high performance field-effect transistor (FET). It is a single, high voltage, N-Channel MOSFET, which is used for various applications in a variety of fields. This FET has great features and high operational performance, which makes it ideal for a range of applications in the data communications, telecommunication, computing, industrial, and automotive electronics industries.

The FDD86250-F085 FET is a very versatile component, thanks to its three different source type options: source inductive, source resistor, or source diode. This feature allows the component to be used in various applications, such as power supplies, analog circuits, audio amplifiers, photography, medical applications, and automotive circuits. The component is also suitable for high speed analogue and digital circuits, such as DC to DC converters, high-speed motor control, power switching, and high-side switching.

This component is based on a N-channel, insulated gate, and high voltage type power FET technology. Its gate, drain and source are of the same polarity, making it an excellent choice for high power applications. It can handle very high power requirements and offers excellent stability and linearity. It also has high immunity to noise and temperature, thanks to its temperature-compensated characteristics. In addition, it is also very reliable and is suitable for use in hostile electrical environments.

The FDD86250-F085 is based on a MOSFET structure, which is widely used in various fields. This semiconductor device consists of three terminals: source, gate, and drain. The source and drain are electrically connected to form a continuous channel, which is the path for electric current to flow between the two terminals. The gate terminal acts as a switch and controls the flow of current across the channel.

The FDD86250-F085 has a very low on-resistance of 0.9mΩ, and its drain-source breakdown voltage is rated at 250V. This allows it to handle heavy current levels, making it suitable for high power applications. The device has an exceptionally low gate-source capacitance and switching time which allows it to switch quickly and efficiently. It also has excellent thermal performance, making it robust and reliable.

The working principle behind the FDD86250-F085 is very simple. When a voltage is applied to the gate, it creates an electric field over the semiconductor channel. This electric field changes the width of the channel, and thus the resistance in the channel. This resistance change causes current to flow or not flow, depending on the magnitude of the voltage applied to the gate.

Overall, the FDD86250-F085 is a very versatile and robust FET component with great features, high operation performance, and low power consumption. This component is suitable for various applications and provides excellent stability, linearity, immunity to noise, and temperature. Thanks to its simple working principle and low on-resistance, it is an ideal choice for many high power applications.

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