FDD8896-F085

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The FDD8896-F085 is an N-channel power MOSFET from Fairchild Semiconductor. This device is part of the SuperFET family of semiconductors, which offer superior performance and reliability compared to traditional MOSFETs. It has an RDS(on) at 4.5 mΩ and an Id at 65 A (marked on the package) and is designed for fast switching applications. The FDD8896-F085 is ideal for applications in mobile devices, power management, automotive power, and photovoltaics.

Power MOSFETs are an important type of transistor used in modern circuit design. They are a voltage-controlled switch that can be used to switch high currents and voltages, and are a key part of many digital and power circuit designs. The FDD8896-F085 is an N-channel MOSFET, meaning that it is designed to be turned on when a positive voltage is applied to the gate. When the positive voltage is removed, the MOSFET is turned off, hence the term “power switch”.

The FDD8896-F085 has a pinout configuration of three pins. The pins are the Gate, Drain, and Source. The Gate is the controlling pin which turns the MOSFET on and off. The Drain and Source pins are used to transfer current either through the on-state of the MOSFET or through the off-state, depending on the state of the Gate. The FDD8896-F085 is a logic-level MOSFET, meaning that the Gate voltage must be higher than the threshold voltage for the MOSFET to be turned on, and lower than the threshold voltage for the MOSFET to be turned off.

The FDD8896-F085 has a threshold voltage of 2.3 V and a total gate charge of 18 nC. The total gate charge is the sum of capacitances that develop across the Gate-Source, Gate-Drain, and Source-Drain junctions when the MOSFET is operating. These capacitances can be used to determine the switching speed of the MOSFET, as well as the amount of power required to operate the MOSFET. The FDD8896-F085 has a low gate charge, meaning that it requires less power to operate.

The FDD8896-F085 is designed for fast switching applications, meaning that it can quickly transition between the on and off states at high speed. It is rated at up to 7 A and has an ON-resistance of 4.5 mΩ. This means that the device can handle large currents with minimal power loss. The fast switching speed makes it ideal for use in power converters, motor controls, and power management systems.

The FDD8896-F085 is also a low RDS(on) device which means that it consumes less power. This makes it an ideal choice for applications that require high efficiency, such as automotive systems, power converters, and mobile devices. As a SuperFET, it also offers superior thermal conductivity and reliability compared to traditional MOSFETs.

The FDD8896-F085 is a highly efficient and reliable N-channel MOSFET from Fairchild Semiconductor. It is ideal for applications in power management, automotive power, photovoltaics, and mobile devices. It has a low RDS(on), low gate charge, and fast switching speed, making it well suited for fast switching applications. The SuperFET design ensures improved reliability and thermal conductivity, making it an excellent choice for today\'s applications.

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