Allicdata Part #: | FDD86369OSTR-ND |
Manufacturer Part#: |
FDD86369 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CHANNEL 80V 90A TO252 |
More Detail: | N-Channel 80V 90A (Tc) 150W (Tj) Surface Mount TO-... |
DataSheet: | FDD86369 Datasheet/PDF |
Quantity: | 1000 |
FET Feature: | -- |
Power Dissipation (Max): | 150W (Tj) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252, (D-Pak) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Series: | Automotive, AEC-Q101, PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7.9 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2530pF @ 40V |
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The FDD86369 is a silicon-based power MOSFET (metal-oxide-semiconductor field-effect transistor). This particular type belongs to the category of N-channel FETs, which usually feature low power consumption and high-speed performance.
A FET works on the principle of capacitance, in which electrons move from one terminal to another through an insulated gate. This type of transistor has two terminals, the source and the drain, and a third terminal called the gate. The gate is separated from the source and drain by a thin layer of insulation, allowing the switching of current between the source and the drain. When voltage is applied to the gate, it modifies the electric field between the source and the drain, allowing current to flow between them. This allows a MOSFET to be used as a switch or amplifier, depending on the device design.
FDD86369 devices are power MOSFETs, meaning they are designed to handle large currents. These devices are used in many applications and can provide a number of benefits, such as high efficiency and low power consumption. They are often used to power larger electronic equipment, such as computers and industrial machinery, as well as in automotive systems. Due to the wide range of applications for the FDD86369, it is capable of operating over a wide range of temperatures and voltages, making it ideal for many different types of applications.
The FDD86369 is a robust, reliable and easy-to-use MOSFET device. It features a combination of an insulated gate and a robust source-drain structure, allowing it to handle high current and power ratings without performance losses due to heating or other electrical variables. It also incorporates an integral protection circuit, making it resistant to thermal and electrical stresses.
This power MOSFET is used in a wide variety of applications, ranging from telecommunications and military systems to automotive and consumer electronics. In addition, it is becoming increasingly common in renewable energy applications, such as solar and wind power, where it can be used as a switch or amplifier. Its low power consumption and high switching speeds makes it ideal for these types of applications.
The FDD86369 is a versatile and reliable power MOSFET that is suitable for a wide range of applications. It provides high efficiency and low power consumption, while its robust construction and integral protection ensure a reliable operation. As such, it is becoming increasingly popular for a variety of applications and is becoming an increasingly common choice for high-end electronics.
The specific data is subject to PDF, and the above content is for reference
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