FDD8770

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	115W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3720pF @ 13V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	73nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	4 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The FDD8770 is a single N-channel MOSFET power transistor manufactured by Fairchild Semiconductor. It is designed for a variety of high-power switching applications, including high frequency switching, RF power amplifiers, power supplies, DC-DC converters, high voltage inductors, and a variety of high-power LED lighting applications. The FDD8770 is designed as a discrete device and is capable of withstanding high voltage and current. It is rated for an operating voltage of up to 100V, with a maximum I D of 300A and a P D of 1000W. Additionally, it has a very low reverse transfer capacitance of 0.4 pF and a highly-resistant breakdown voltage of 155V. The FDD8770 is a single-die, N-channel MOSFET power transistor with a DMOS (Double-Diffused Metal Oxide Semiconductor) structure. DMOS technology provides several advantages for the device, such as improved device reliability and improved switching performance. Additionally, the device offers a reduced leakage current and improved thermal stability. The FDD8770 is a full-mold process with a nickel-chrome barrier layer between the source and drain. The layer ensures excellent performance while eliminating the need for additional p-type layers, improving the thermal and switching characteristics of the device. Additionally, the gate oxide is constructed of hexagonal poly-silicon, which further improves the device\'s performance. The FDD8770 is a high-performance N-channel MOSFET suitable for a variety of high-power switching applications. To optimize performance and ensure compatibility, the device includes a built-in diode for reverse voltage protection and a "bootstrap" circuit for improved gate drive signal. Additionally, the device has a low on-state resistance and a high breakdown voltage. The FDD8770 is also suitable for use in a variety of Power-over-Ethernet (PoE) applications. PoE is an energy-efficient technology that supplies power and data to Ethernet-enabled devices through a single cable. The FDD8770 can be used in PoE applications to support both IEEE 802.3af and IEEE 802.3at standards, with improved efficiency, enhanced power delivery, and overcurrent protection. Overall, the FDD8770 is an excellent choice for a variety of high-power switching applications. With its high operating voltage, low reverse transfer capacitance, and high-resistant breakdown voltage, it is ideal for high-frequency switching, RF power amplifiers, power supplies, DC-DC converters, high voltage inductors, and a variety of high-power LED lighting applications. Additionally, it is suitable for use in PoE applications, with improved efficiency, enhanced power delivery, and overcurrent protection.

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