FDD8424H Discrete Semiconductor Products

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FDD8424H is a MOSFET array designed with four N-channel power MOSFETs in a single package. It is also known as a voltage-controlled field-effect transistor array and has a wide range of practical applications. This article will discuss the various application fields, as well as the various working principles of the FDD8424H.

Features and Application Fields

The FDD8424H is an ideal solution for a variety of applications that require high frequency switching, including motor control, power converters, inverters, power supplies, and DC-DC converters. With these features, the FDD8424H is one of the most widely used power switching devices in the world. Additionally, because of its low on-resistance and gate-source capacitance, it provides efficient operation at high frequencies.

Furthermore, the FDD8424H is well suited for robotic systems and other high-performance applications. Its integrated gate-source and gate-drain capacitance minimises switching losses, allowing the device to operate efficiently with minimal power consumption. Furthermore, its low input capacitance minimises power consumption and transient power demand.

Lastly, because of its very low electrical noise, the FDD8424H can be used in noise sensitive applications, such as medical devices, automotive electronics, and more. With its integrated protection features, the FDD8424H is also a great choice for high-voltage applications.

Working Principle

The working principle of the FDD8424H is based on the transfer characteristics of a MOSFET, or metal oxide semiconductor field-effect transistor. The FDD8424H is composed of four powerful N-type MOSFETs in a single package. Each of these individual MOSFETs operates independently.

Each MOSFET is optimized for its specific operation. For each MOSFET, the Gate, Drain, and Source nodes act as the controlling, receiving, and supplying voltages, respectively. The Gate produces an electric field that exerts a gate-to-source voltage, which in turn affects the Drain current in a linear fashion. When the Gate voltage increases, so does the Drain current, and vice versa.

To switch on the device, the Gate voltage needs to reach the threshold voltage. The threshold voltage is determined by the internal process parameters, such as device structure, doping steps, and more. Once the device is “on”, the Gate voltage is increased to reach the desired Drain current.

To switch the device “off”, the Gate voltage needs to be less than the threshold voltage. The device turns off by removing the Gate voltage, so that the initial Gate-to-Source voltage is lost, resulting in minimum Drain to Source current.

The FDD8424H is a great building block for a wide range of power electronics applications due to its extremely low on-resistance and switching losses. It is a reliable, cost-effective solution for a wide range of applications, from motor control and power converters, to high-voltage applications.

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