FDD86569-F085

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FDD86569-F085 is a single-bonded, fast-switching N-Channel complementary metal-oxide semiconductor (CMOS) field-effect transistor (FET). This particular FET is used in a variety of electronic applications due to its small 5mm surface-mount package (SMD) size and the ability to operate at high ambient temperatures.

The FDD86569-F085 is designed to support a maximum drain peak current of 4.8A. Its low on-resistance of 9.5mΩ maximizes energy efficiency while the 20V drain-to-source voltage improves reliability of the device. This FET is compatible with automated surface-mount assembly and reflow soldering processes. It offers good thermal shock and vibration resistance for durability.

In terms of applications, the FDD86569-F085 is ideally used in switching and load-control circuits. It can act as an electronic switch or gate and is suitable for electronic power switching and time-setting functions.

The FDD86569-F085 FET works in three stages. When the drain-source voltage is below the threshold voltage, the FET remains in an off state. When the drain-source voltage is sufficient to bring the VGS voltage above the threshold voltage, the FET conducts current between the drain and source. Above a certain drain-source voltage, the drain current will increase as the VGS voltage increases, typically exponentially.

The on-resistance is the measure of its resistance when in an on-state. It is determined by the channel length, mobility of carriers, and the type of carriers injected into the channel. The main equation for the on-resistance is provided as:

R_DS(on) = (1/μ_ox) [L / W] [V_GS −2V_TP + 2V_SB]

Where μ_ox is the mobility of the carriers, L is the channel length, W is the channel width, V_GS is the gate-source voltage, and V_TP and V_SB are the threshold voltage and the body voltage, respectively.

The threshold voltage (VT) of the FDD86569-F085 is typically between 1.0V and 2.0V, depending on the drain-source voltage VDS. The drain current can be calculated from the gate voltage VGS and the drain-source voltage VDS, using the equation:

I_D = K[V_GS −V_th]^2(V_DS −V_GS)

Where K is a coefficient that is determined by the device geometry and the type of carriers injected into the channel. The FDD86569-F085 also has a body-diode effect which prevents over-switching and improves the reliability of the device.

To sum up, the FDD86569-F085 is a single-bonded, fast-switching N-Channel CMOS FET with a small SMD package size and a maximum drain peak current of 4.8A. Its low on-resistance increases energy efficiency while the body-diode effect prevents over-switching. This FET is used in a variety of electronic applications, and is suitable for electronic power switching, time-setting functions, and load-control circuits. Its on-resistance can be determined using an equation with the channel length, mobility of carriers, and type of carriers injected into the channel as variables, while the drain current is calculated using a function of the gate voltage, the drain-source voltage, and a device-specific coefficient.

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