Allicdata Part #: | FDD86113LZFSTR-ND |
Manufacturer Part#: |
FDD86113LZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 4.2A DPAK-3 |
More Detail: | N-Channel 100V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W... |
DataSheet: | FDD86113LZ Datasheet/PDF |
Quantity: | 2500 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta), 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 104 mOhm @ 4.2A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 285pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 29W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FDD86113LZ is a N-Channel Enhancement Mode MOSFET, widely used in a number of electronic applications. It belongs to a category of electron devices known as Field Effect Transistors, or FETs. FETs are similar to conventional transistors, albeit on a smaller scale. A FET essentially acts as a voltage controlled switch; when a FET is applied with a positive voltage, it allows current to pass through it, while applying a negative voltage blocks the current.
The FDD86113LZ is a single-gate FET, one of the three types of FET transistors. It is notable for its low power consumption and its extremely low voltage thresholds of gate control. Because of this and its size, the FDD86113LZ is an ideal choice for low power and portable applications. It is often used in low to medium power amplifiers, low voltage level shifters, and low voltage power supplies.
The working principle of the FDD86113LZ is fairly simple. It uses electric fields to control the flow of current; when a voltage is applied to the gate of the FET, an electric field is generated which repels or attracts electrons from the channel and changes the resistance of the channel, which then controls the flow of current. This change in resistance is referred to as a transistor action, which is why FETs are also known as field effect transistors.
When the gate voltage of the FDD86113LZ rises above the lower threshold voltage, the device turns “ON” and electrons can move through it. Conversely, when the gate voltage falls below the higher threshold, the device turns “OFF” and no current can flow through it. In either case, the amounts of current that passes through the FET depends on the voltage applied to the gate, as well as the resistance of the device.
The FDD86113LZ is capable of operating at very high speeds; it is often used in applications where fast switching times or high frequency operation is required. Due to its low power consumption and high speed, it can be used effectively in analog circuits, digital circuits, and switching applications. It is also used in a variety of applications such as power supply regulation, motor control, and automotive electronics.
The FDD86113LZ is reliable and efficient, making it an invaluable component in today’s electronics industry. Its low price and small size make it a popular choice among hobbyists and professionals alike. Its wide range of uses and its ease of use ensures that it will be an integral part of future designs.
The specific data is subject to PDF, and the above content is for reference
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