Allicdata Part #: | FDD86102LZFSTR-ND |
Manufacturer Part#: |
FDD86102LZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 8A DPAK |
More Detail: | N-Channel 100V 8A (Ta), 35A (Tc) 3.1W (Ta), 54W (T... |
DataSheet: | FDD86102LZ Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 22.5 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1540pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 54W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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FDD86102LZ Application Field and Working Principle
FDD86102LZ is a high-power field-effect transistor (FET) that has become increasingly popular in a wide range of applications. It is the newest member of the FET family, with the highest power rating of any FET in its class. We’ll explore the wide range of FDD86102LZ application field and working principle in this article. FDD86102LZ Application Field
FDD86102LZ is especially well-suited for high-current, high-frequency applications, due to its high-power rating and speed. It is used in a wide range of products, from automotive applications such as ignition and lighting circuits to industrial controls, such as variable speed motors and brake controllers. It is also used in high-tech applications such as military radio communications, defense radar and high-altitude aircraft power systems. The FDD86102LZ has also become popular in consumer electronics and home appliances, especially for boosting power output for higher power equipment or for portable electronics and battery-operated devices. Its use in flat-screen TVs, laptop computers and wireless technologies has also enabled compact, lightweight and energy-efficient products to be created. Working Principle
FDD86102LZ is a FET that relies on the controlled movement of electrons, or ‘carriers’, through a channel in the substrate. The carriers can be switched on and off using a gate voltage, enabling the current flow to be varied to suit the application.The main difference between FETs and traditional BJT transistors is that the gate of the FET is insulated from the channel, meaning that the gate voltage has no direct effect on the drain current. Instead, the gate voltage induces a gate-channel capacitance (or ‘gate-drain capacitance’), which modulates the drain current. FDD86102LZ also offers excellent linearity and low On-state resistance compared to other FETs. This makes it ideal for signal conditioning and power management, as well as for high-speed switching and PWM control. Conclusion
FDD86102LZ is an increasingly popular choice for high-power applications, due to its high-power rating, speed and linearity. It is used in a wide range of industrial, automotive and consumer products, and its working principle relies on the controlled movement of electrons through a channel in the substrate. It also offers excellent linearity and low On-state resistance compared to other FETs, making it ideal for signal conditioning and power management, as well as for high-speed switching and PWM control.
The specific data is subject to PDF, and the above content is for reference
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