FDD8870

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FDD8870 is a robust enhancement mode N-channel MOSFET with high current and low on-resistance. It offers excellent switching performance, with operating temperature range from -55°C to 150°C suitable for various environment. This FET is suitable for applications such as power supply, motor control, and inductive load switching. Furthermore, its low gate charge allows faster switching speed, thus highly suitable for switching power supply applications, such as home appliance, adapter, and LED lighting.

FDD8870 is a kind of enhanced MOSFET, which has a broad application field, such as motor driver, DC/DC converter, switching power supply, constant current power supply, low-noise power supply and so on. It has excellent performance, with 2.6V gate voltage, low gate charge of 19nC, low total gate charge of 35nC, and low internal gate resistance of 9 mΩ.

The working principle of the FDD8870 MOSFET is rather simple. It is made up of N-channel MOSFETs with a source and gate at opposite ends of the FET and connected to the drain. When a gate voltage (VG) is applied, it depletes the channel of majority carriers. When the gate voltage surpasses its threshold (VT) the MOSFET becomes conducting and a current flows between its source and drain terminals. When creating higher voltages, the threshold voltage (VGS) of the FET needs to exceed its specified value, which is equal to the gate to source voltage minus the threshold voltage (VG - VT). This will then lead to a larger drain to source current (ID), allowing higher voltages to be created.

FDD8870 also has low reverse recovery time of less than 80nS in applications such as low noise power supply, where high output currents are required but still maintain low switching losses. The MOSFET is also capable of withstanding high avalanche energy of up to 181mJ, allowing it to remain stable in applications where high surge current is expected.

In summary, FDD8870 is a robust enhancement mode N-channel MOSFET with high current and low on-resistance, offering excellent switching performance and low gate charge, which makes it suitable for a wide range of applications. With its low threshold voltage and low reverse recovery time, it is able to withstand high surge currents in a variety of environments. It is an ideal choice for applications such as motor control, inductive load switching, and power supply applications.

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