FDD8580 Discrete Semiconductor Products |
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Allicdata Part #: | FDD8580TR-ND |
Manufacturer Part#: |
FDD8580 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 35A DPAK |
More Detail: | N-Channel 20V 35A (Tc) 49.5W (Tc) Surface Mount D-... |
DataSheet: | FDD8580 Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1445pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 49.5W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252AA) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FDD8580 is a large actively controlled Field Effect Transistor (FET). It has the ability to quickly switch large amounts of current, providing a high level of control in a single package. It is often referred to as a “surge suppressor”, as it can be used to reduce large surges in current that may otherwise cause damage in electronic circuits.
The FDD8580 is typically used in applications where high efficiency and low-voltage operation is required. This makes it commonly found in many power supply designs and power converters. It is also the preferred choice for high-powered DC-DC converters, making it a great addition to any design requiring high power networks with minimal device size. As far as its application field, apart from power converters, the FDD8580 has also found its applications in the wireless, telecommunications and automotive industries.
The FDD8580 is an n-channel MOSFET, which requires a gate voltage of over 6V in order to start functioning. This is why it is typically used in switching applications where a higher voltage or larger drive current is required. It also works best in environments with a low-level of ambient noise. This makes the FDD8580 one of the most reliable and versatile MOSFETs available.
The FDD8580 is a transconductance device, meaning that the gate terminal acts as a field effect, allowing direct control of the source-drain current while maintaining a parameter distribution condition in the source-drain channel. The FDD8580 also features a low-voltage impedance, which allows for precise on/off control of power. This low-voltage impedance is essential in a wide range of electronic circuits including voltage regulation and switching applications.
The FDD8580 is designed to switch high levels of current with peak drain currents of up to 4A. Its low operating voltage makes it ideal for low-power applications, and its low-on-resistance ensures low-loss switching. Combined with the relatively low-cost of the device, the FDD8580 is a great choice for a wide range of high-current, low-voltage applications.
In summary, the FDD8580 is a large and actively controlled MOSFET device, which can switch large amounts of current at relatively low-voltages and low-losses. It excels in high-powered DC-DC converters, and is a great addition to many power supply designs and power converters. Its low-on-resistance and low-voltage impedance ensures precise on/off control of power, making the FDD8580 an ideal choice for many power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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