FDD86367 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDD86367 is a type of N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is used to regulate the flow of current. It is capable of operating in high temperatures and supports voltages up to 500V. The FDD86367 is a single-gate MOSFET, meaning that it requires a single gate voltage which controls its conduction from Source to Drain. The default OFF-state resistance is relatively low, and the FDD86367 has the highest drain-source breakdown voltage (BDS) of all the MOSFETS available in the marketplace for this application.

The FDD86367 can be used for a variety of applications such as switches, transducers, amplifiers, and motor controls. The FDD86367 can be used as a switch for enable/disable control of power to an output, as a driver for electrical motors, as a transducer in a feedback loop, or as an amplifier in audio applications. For example, the FDD86367 can be used to control a relay in a circuit which turns on a light when the voltage between the gate and the source is above a certain level.

The working principle of the FDD86367 is based on the fact that when an electrical charge is applied to the gate terminal of an MOSFET, it creates a conductive channel between the drain and the source. The size of this channel determines the current that can flow when a voltage is applied to the drain and source terminals. This current flow is referred to as the bias current. The FDD86367 is designed to ensure that the gate voltage remains between the threshold voltage and the pinch-off voltage.

When the gate voltage is lower than the threshold voltage, there is no conduction from the drain to the source. This is because the gate voltage has not been sufficient to open the MOSFET and form a conducting channel. As the gate voltage increases and approaches the pinch-off voltage, the MOSFET starts to conduct current. If the gate voltage is greater than the pinch-off voltage, the MOSFET will conduct the maximum amount of current it can handle safely.

The FDD86367 has a very low on-resistance of 0.3 ohms, which is an ideal characteristic for power switching applications. The low resistance allows less power to be lost in the MOSFET itself and means that more of the power is converted into useful output. The FDD86367 can also handle high surge currents, making it ideal for applications that require large amount of current. The FDD86367 also has excellent thermal characteristics, making it capable of dissipating large amounts of heat without affecting its performance or reliability. This makes it a great choice for applications that require heavy computing or complex calculations.

The FDD86367 is a versatile MOSFET that can be used in a variety of applications. It has very low on-resistance, high breakdown voltage, and excellent thermal characteristics making it suitable for high-power applications. The versatile FDD86367 can be used as a switch, transducer, amplifier, or motor driver in many different applications.

The specific data is subject to PDF, and the above content is for reference