FDD8780

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	8.5 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1440pF @ 13V
FET Feature:	--
Power Dissipation (Max):	50W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252AA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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FDD8780 is a single enhancement-mode power MOSFET designed for high-current switching and high-speed switching applications. It is a high-voltage MOSFET switch package with an N-channel MOSFET integrated circuit and a unitary structure that has both a high input impedance and a low on-resistance rating. It is typically used in switching applications such as high-current DC-DC converters, high-efficiency switched-mode power supplies, high-accuracy bipolar power supply controllers, and various high-power homoe appl ications.The FDD8780 has an N-Channel MOSFET (Field Effect Transistor) chip that is built on an integrated circuit (IC) package. The N-Channel MOSFET is a voltage-dependent device, so it is controlled by a voltage applied to its gate terminal. When a voltage higher than its threshold voltage (Vgs) is applied to its gate terminal, it turns on and allows current flow from the source to the drain. That voltage is called the drain-source voltage (Vds). When the gate drive signal is removed, the device turns off. In addition, when the drain-source voltage (Vds) exceeds its rated maximum voltage, the device turns off and prevents further current from flowing, ensuring a safe and reliable operation.FDD8780 has a low on-resistance rating of 0.20 ohms and a superior thermal conducitivity to regulate the temperature. Its rugged design and advanced manufacturing process enable it to handle currents up to 30A and voltages up to 100V. In addition, its low gate charge makes it suitable for high-speed switching applications. When used in high-current switching applications, the device reduces loss from power dissipation and enables high-efficiency operations.FDD8780 can be used to control current in a circuit in several ways. First, it can be used as a field-effect transistor (FET) switch in high-current DC-DC converters, as it can be switched on and off by applying a voltage to its gate terminal. Second, it can be used as a high-efficiency switched mode power supply, since it enables smooth current control at high speeds and low power losses. Finally, it can be used as a bias controller for bipolar power supplies, where it can provide higher precision and performance than conventional methods. Furthermore, with its high-speed switching capability and high-current handling capacity, the FDD8780 is also well-suited for high-power home applications such as motorized window shades and bathroom exhaust fans. It has a very low input capacitance and a high peak current capability to ensure reliable operation even in applications with high inrush currents. Overall, the FDD8780 is a versatile and reliable gate-controlled single enhancement-mode MOSFET switch package suitable for a variety of high-current and high-speed switching applications, such as controlling current in DC-DC converters, high-efficiency switched-mode power supplies, and in motorized applications. Its low on-resistance rating and high thermal conducitivity provide excellent switching performance and enable efficient operations. Its low gate charge and high peak current capability make it suitable for a wide range of applications, from bipolar circuits to high-power home applications.

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