| Allicdata Part #: | FDD8445-F085TR-ND |
| Manufacturer Part#: |
FDD8445-F085 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 40V 70A DPAK |
| More Detail: | N-Channel 40V 70A (Tc) 79W (Tc) Surface Mount TO-2... |
| DataSheet: |  FDD8445-F085 Datasheet/PDF |
| Quantity: | 2500 |
Specifications
| Series: | Automotive, AEC-Q101, PowerTrench® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40V |
| Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 8.7 mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4050pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 79W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-252AA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
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The FDD8445-F085 is a Floating-gate Field Effect Transistors (FET) usually known as a MOSFET that has been designed to provide excellent performance in a wide variety of applications. It features a drain-source rating of 70V, low on-resistance of 60mΩ and a low gate charge of only 4.4nC. The FDD8445-F085 can be used in a variety of applications from motor controllers, power converters and power switches to computer peripherals, data acquisition systems and more.The basic principle of a FET is that it is a three terminal device with a source, a gate and a drain. The source and gate are connected to a metal oxide semiconductor (MOS) structure, while the drain is connected to a current source. When the gate voltage is increased, the MOS structure will allow a current to flow between the source and drain, thus providing an electrical connection between the two.The FDD8445-F085 is well suited for high-speed switching applications, thanks to its low on-resistance and low gate charge. Its low on-resistance ensures that it can be used in high-speed switching applications, as it minimizes power dissipation through resistance. Additionally, its low gate charge minimizes switching losses and allows for high-frequency operation of the device. Furthermore, its high blocking voltage capabilities makes it suitable for use in applications that require a high voltage switch, such as power converters and power switches.In terms of packaging, the FDD8445-F085 comes in a variety of packages including a TO-220, a DIP and a SIP. This packaging makes the FDD8445-F085 suitable for both through-hole and surface-mount applications, depending on the application’s needs.In terms of protection, the FDD8445-F085 has been designed to be highly robust, allowing it to withstand a range of environmental stressors. It is rated to withstand up to a maximum drain-source voltage of 70V and a maximum gate-source voltage of 20V. Additionally, the device is fitted with a built-in reverse-bias safe operating area protection that protects the MOSFET from over-voltage and reverse-current damage.Overall, the FDD8445-F085 is an excellent example of a MOSFET that can be used in a broad range of applications, from motor controllers and switches to power converters. It features a low on-resistance and gate charge that make it suitable for high-speed switching applications, as well as a range of protection features that ensure it can withstand environmental stressors. Furthermore, its wide range of packages make it suitable for both through-hole and surface-mount applications.
The specific data is subject to PDF, and the above content is for reference
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