Allicdata Part #: | FDD8882TR-ND |
Manufacturer Part#: |
FDD8882 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 55A D-PAK |
More Detail: | N-Channel 30V 12.6A (Ta), 55A (Tc) 55W (Tc) Surfac... |
DataSheet: | FDD8882 Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 12.6A (Ta), 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11.5 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1260pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 55W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FDD8882 is an N-channel enhancement-mode Field Effect Transistor (FET). An FET is the most common type of transistor used today in a wide range of applications. It is a three-terminal electronic device that is made from a semiconductor material such as silicon. FETs are widely used as switching and amplifying devices in digital circuits, and are particularly well-suited for high-frequency applications. The FDD8882 is a widely used device for providing switching and amplifying functions in digital systems.
The FDD8882 is commonly available in both a through-hole and surface mount version. It is also offered in a variety of package sizes, making it suitable for a wide variety of applications. The FDD8882 typically has an operating voltage range of 4V to 80V, and an operating frequency range of 10kHz to 1GHz. It has a maximum on-resistance of 0.6Ω and a maximum gate to drain capacitance of 17pF.
The FDD8882 is a depletion-mode MOSFET, which means that it requires a negative gate voltage to turn it on. The FDD8882 is also an enhancement-mode device, which means that it does not require a negative gate voltage to turn it on; a positive gate voltage is sufficient. To turn on the FDD8882, the gate-source voltage must be higher than the threshold voltage (Vt). The higher the gate voltage, the lower the device\'s on-resistance.
The FDD8882 is most commonly used as a switch in digital circuits. It is also used in a wide range of applications such as power MOSFETs, gate drivers, high speed switching circuits and high frequency amplifiers. The FDD8882 is well-suited for these applications because it is a low-cost and low-noise device that can handle high current and high speed signals.
The FDD8882 working principle is the same as any other MOSFET. When a positive potential is applied to the gate terminal, it creates an electric field that attracts the electrons in the body region to the gate and allows current to pass through the device. When the gate potential is negative, the electric field is reversed and the electrons in the body region are repelled from the gate, thus blocking current from flowing.
The FDD8882 can be used in various analog and digital circuits for a variety of purposes. It can be used for switching applications, such as in logic gates. It can also be used for power amplification, such as for driving motor circuits or for providing Class D audio amplification. When used for switching or power applications, the FDD8882 is usually the preferred device due to its low on-resistance and high current capabilities.
The FDD8882 is a highly versatile device and is suitable for a wide range of applications. Its small size and low cost makes it attractive for small-scale applications while its high frequency and current capabilities make it suitable for higher-end applications. Its high-performance capabilities coupled with its low on-resistance make it an attractive choice for logic and power amplifying applications.
The specific data is subject to PDF, and the above content is for reference
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