FDD8451

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-PAK (TO-252)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	990pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	24 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta), 28A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDD8451 is a power transistor which is used as a low-side low-voltage load switch for mobile devices and other applications which require low on-state resistance (RDS) and fast switching speeds. It is composed of an advanced N-channel MOSFET which has been specially designed to provide high performance and low power consumption. This power transistor is typically used in switch-mode power supplies, motor control and other applications which require high current switching.The FDD8451 is available in a P-channel, dual-channel and an N-channel device. The device is optimized for applications requiring low RDSon and fast switching speeds. The device has a low gate capacitance of only 4pF and a fast switching time of 1 millisecond. The device also has a low-temperature coefficient, allowing for excellent thermal operation.The FDD8451 has two main applications fields: Mobile Devices and Power Supplies, and Motor Control. In Mobile devices, the device can be used to provide low resistance switching, fast switching speeds and low power consumption in order to achieve the desired performance and power efficiency. In Power Supplies and Motor Control applications, the device can be used to provide fast switching and low energy consumption. The FDD8451 works based on the principle of the Field Effect Transistor (FET). A FET consists of a gate, a source and a drain. The voltage applied at the gate creates an electric field which is modulated through the FET. The electric field affects the flow of electrons between the source and drain. The size of this flow is determined by the current of the FET also known as its Gate current. By controlling the Gate current, the current flow between the source and drain can be controlled. With the FDD8451, a low gate current is used to obtain high current on/off switching with low RDS and fast operating speeds. This makes it suitable for applications requiring high current switching and low power consumption. The FDD8451 is also designed with a body diode to protect against reverse voltages. When a voltage is applied in the reverse direction, the diode will activate and provide protection to the device. This helps ensure that the device is not damaged due to reverse voltages.All in all, the FDD8451 is an advanced power transistor designed for low-side low-voltage load switch applications. Its low gate capacitance, RDS and fast switching speeds make it suitable for mobile devices, power supplies and motor control applications. The device is also designed with a body diode to provide protection against reverse voltages.

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