Allicdata Part #: | FDD8453LZ-F085TR-ND |
Manufacturer Part#: |
FDD8453LZ-F085 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 50A DPAK |
More Detail: | N-Channel 40V 50A (Tc) 118W (Tc) Surface Mount D-P... |
DataSheet: | FDD8453LZ-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.30084 |
Specifications
Series: | Automotive, AEC-Q101, PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.7 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3515pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 118W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Base Part Number: | FDD8453 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDD8453LZ-F085 is a popular choice for applications requiring single MOSFET switches. With its low on-resistance, high capacitive loading capability, and fast switching times, the FDD8453LZ-F085 is a reliable high-performance switch that can be utilized in a variety of applications, ranging from low power circuits to high power vehicles.To get a better understanding of the FDD8453LZ-F085, it is important to first understand its working principle. The FDD8453LZ-F085 is a depletion mode MOSFET, which means that it is turned on when a small amount of voltage is applied to its gate. When the voltage is removed, the device shuts off, making it an ideal choice for switched applications. As the voltage applied to the gate of the FDD8453LZ-F085 increases, the amount of current that can flow through it increases proportionally. As the gate voltage increases, the FDD8453LZ-F085 can handle more current and its on-resistance decreases accordingly. The FDD8453LZ-F085 is a versatile switch with a variety of applications. Given its low on-resistance and fast switching times, it is well suited for applications where low power switching is needed. It is especially well suited for pulse-width modulation circuits, where the fast switching times allow a wide range of duty cycles to be achieved. Additionally, its high capacitive loading allows it to be used in high power switching applications, such as electric vehicle control systems. The FDD8453LZ-F085 is also a reliable option for use in circuits with long switching cycles, such as automotive audio systems. Its low on-resistance and low gate charge makes it more durable than many other MOSFETs and allows it to power through switching cycles that would cause most other MOSFETs to fail. This makes it an excellent choice for circuits where reliability is paramount. The FDD8453LZ-F085 is also a popular choice for power management applications. Its low on-resistance and high capacitive loading capability make it especially suitable for applications involving switching off and on large loads, such as air conditioning systems. Additionally, its fast switching times make it an excellent choice for voltage regulation, where precise control of voltage is needed. Overall, the FDD8453LZ-F085 is a high-performance single MOSFET switch that offers excellent performance and reliability. Its low gate voltage and low on-resistance make it ideal for low power switching applications, while its high capacitive loading capability and fast switching times make it well suited for high power switching applications. Its long switching cycles and high reliability make it a great choice for a variety of power management applications, making it an excellent choice for any circuit requiring a single MOSFET switch.The specific data is subject to PDF, and the above content is for reference
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