Allicdata Part #: | FDD86561-F085-ND |
Manufacturer Part#: |
FDD86561-F085 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 45A DPAK |
More Detail: | |
DataSheet: | FDD86561-F085 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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FDD86561-F085 is an insulated gate field-effect transistor (IGFET), also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is designed with a high-voltage rating for use in automotive applications such as motor control, brushless DC motor control, gate driver power supplies, unidirectional motor drives, and more. It also has an ultra-low RDS(on) resistance value and a small footprint.
Application Field
FDD86561-F085 has a wide range applications in automotive systems, including powertrain, body control, convenience, motors, and on-board battery chargers. It is used in brushless DC motor control, gate driver power supplies, unidirectional motor drives, motor control, and automotive power supplies. It is also used in a variety of other applications, such as mobile phones and mobile audio systems.
FDD86561-F085\'s small size means it can be used in high density power density applications. This makes it ideal for use in compact automotive systems. Its high-voltage rating makes it suitable for use in harsh ambient conditions, such as the +12V automotive environment. It is also suitable for use in wide temperature range applications, from -40°C to +125°C.
Working Principle
FDD86561-F085 is a MOSFET with a single gate electrode. This means that it has a single voltage input. The gate voltage controls the current flow through the device, allowing it to produce a wide range of electrical signals, such as a switching signal or an analog voltage or current. Because the gate voltage is the only controlling factor, the device is considered to be a voltage-controlled device.
When the gate voltage is increased above the threshold voltage, the MOSFET enters the ‘on’ state. The flow of current between the source and drain is then controlled by the gate voltage. When the gate voltage is decreased, the MOSFET enters the ‘off’ state and the current flow stops.
FDD86561-F085 is a single-switch MOSFET, which means that the device can only be turned on or off. This means that it is not suitable for linear applications, such as amplifiers or voltage regulators. However, it is ideal for switching applications, as it can be quickly switched from on to off.
Conclusion
FDD86561-F085 is an insulated gate field-effect transistor (IGFET), also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a high voltage and high current device, with a wide temperature operating range and an ultra-low RDS(on) resistance value. It is suitable for use in automotive applications such as motor control, brushless DC motor control, and gate driver power supplies. Its single gate voltage input allows for a wide range of electrical signals, and its small size means it can be used in high-density applications.
The specific data is subject to PDF, and the above content is for reference
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