FDD8878

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Field-Effect Transistors (FETs) are devices that allow for the modulation of current flow based on the difference in the electrical field across their gates. FETs come in a variety of forms, including MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and single FETs, such as the FDD8878. This article will explore the application field and working principle of FDD8878.

FDD8878 is an N-channel Enhancement Mode Field Effect Transistor (FET). It has an extremely low on-state resistance and is designed for high frequency switch applications. The device is well suited to bridge supplies up to 30V, as well as high frequency drivers with high dv/dt and excellent FRE characteristics. It is also used in power supply converters, motor control circuits, and switching power supplies.

The FDD8878 is constructed from three main components; the gate, the source, and the drain. The gate is a gate electrode that is insulated by a metal gate oxide (MOG) from the source and drain. When the voltage difference between the gate and source is increased, current begins to flow through the channel beneath the MOG and from the source to the drain. This current flow may be modulated by altering the potential of the gate.

For lower frequencies, the FDD8878 acts as a low resistance switch. When the gate voltage is higher than the source, the device is said to be in the “on” state, and electrons are allowed to flow from the source to the drain. When the gate voltage is lower than the source, the device is said to be “off” and electron flow is stopped. Due to its low resistances and ability to pass high frequencies, the FDD8878 is often used in switching applications.

At higher frequencies, the FDD8878 exhibits additional properties. As frequency increases, the gate, source and drain capacitances become more influential in the functioning of the device. As the capacitances begin to play a role, the FDD8878 begins to act like an amplifier, rather than a switch. This amplifier characteristic allows it to be used in power supply converters, motor control circuits, and switching power supplies.

When the device is connected in the amplifier configuration, two important electrical properties of the FDD8878 need to be considered. These properties are the total gate charge (Qg) and the transconductance (gm). The total gate charge is the total amount of charge, in Coulombs, that is required to discharge the gate when the device is driven from the conductive to non-conducting state. The transconductance is a measure of the voltage-gain of the device, and is measured in Siemens (S).

The FDD8878 offers a high level of performance for a wide range of applications, including power supply converters, motor control circuits, and switching power supplies. Its low on-state resistance and high frequency switch characteristics make it an ideal choice for high frequency switching applications.

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