Allicdata Part #: | FDD8426H-ND |
Manufacturer Part#: |
FDD8426H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 40V 12A/10A DPAK |
More Detail: | Mosfet Array N and P-Channel 40V 12A, 10A 1.3W Sur... |
DataSheet: | FDD8426H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 12A, 10A |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2735pF @ 20V |
Power - Max: | 1.3W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Supplier Device Package: | TO-252-4L |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDD8426H is a four N-channel depletion mode MOSFET array with a built-in resistor. This device has two parts, the FDD8426H N-Channel MOSFET which is made of an array of N-channel MOSFETs along with a resistor. Together they provide an efficient and low-voltage alternative to other similar devices.
The FDD8426H is widely used in various electronic applications such as power management, audio driver, lighting control, and instrumentation. It is one of the most popular and widely used MOSFET arrays in the industry. The FDD8426H is particularly suited for battery-operated applications due to its low power consumption and small size.
The FDD8426H has many advantages over other MOSFET arrays. Its low on-resistance combined with its built-in resistor make it an ideal choice for low-voltage, high-current applications. Its excellent thermal performance and low on-resistance makes it an effective solution for power management, audio driver and other audio related applications. Its high-side gate drive capability and low off-resistance helps reduce the gate to source capacitance.
The working principle of the FDD8426H is based on the depletion layer phenomenon. This phenomenon occurs when the gate-source voltage is lowered so that the depletion layer that builds up around the gate region prevents current from flowing between the gate and the source. As the voltage dropped at the gate is varied, the size of the depletion layer determines how much current is allowed to flow through the device. This makes the FDD8426H ideal for low-voltage, high-current applications.
The FDD8426H is compatible with many types of circuitry such as CMOS, TTL and other MCUs. The FDD8426H also interfaces well with many types of inductors and capacitors, making it the perfect choice for audio driver and other audio related applications. The FDD8426H can be used as an array on its own or with other MOSFETs in order to control power, provide interlock functions, and regulate current.
The FDD8426H is an excellent solution for power management, audio driver and other audio related applications. It is highly robust, with excellent thermal performance and low on-resistance. The built-in resistor and the depletion layer phenomenon make it an optimal choice for low-voltage, high-current applications. Its compatibility with various types of circuitry, inductors and capacitors, make it the perfect choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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