FDMS1D4N03S

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDMS1D4N03S is a highly capable and sophisticated semiconductor device from Fairchild Semiconductor. It is a single-gate, fully-depleted silicon-on-insulator (FDSOI) n-type metal-oxide-semiconductor field-effect transistor (MOSFET). This advanced MOSFET offers excellent on-state resistance, low gate-charge and doping concentrations and high breakdown voltage, making it ideal for many modern power management applications.

The FDMS1D4N03S is designed to operate in the normally-on or normally-off mode of operation. In the normally-on mode, the MOSFET conducts as soon as the gate voltage is higher than the source voltage, thus allowing for fast switching times. In the normally-off mode, the source and gate voltages must be equal for the MOSFET to start conducting. This feature is especially advantageous in applications involving the switching of high voltages, as it prevents high gate voltages and therefore dangerous voltage differentials.

The high lateral electric field strength of the FDMS1D4N03S makes it ideal for applications in which high electric fields must traverse long distances (i.e. rapid charging of capacitors). Furthermore, its low effective mobility makes it suitable for applications requiring high switching speeds. Its low gate charge not only reduces switching losses, but also reduces power consumption during operation. From an environmental perspective, the FDMS1D4N03S is RoHS compliant and, as it operates at a relatively low voltage, presents no chemical hazards. This makes it a great choice for mobile devices and other green electronics applications.

The FDMS1D4N03S is most commonly used in power management, motors, displays and switching applications. The applications for which it is suitable are wide ranging, from power supplies and portable electronics to motor controllers, switches and low-frequency amplifiers. Additionally, it can be used as a switch in high-speed digital systems as well as in differential amplifier circuits, DC-DC conversion and automotive systems. Its low on-state resistance makes it suitable for power supplies where minimal power loss is a priority. Its high breakdown voltage and low doping concentration makes it suitable for high-voltage applications such as those found in motor controllers and power lines.

The FDMS1D4N03S works by controlling the flow of current between the source and the drain. The device is constructed with two p-type silicon layers and one n-type silicon layer, with a thin insulator separating them. When a voltage is applied to the gate, a capacitance is created and the gate can control the electric field near the drain to either enhance or reduce the current between the source and drain. Furthermore, the FDSOI structure of the FDMS1D4N03S allows for greater precision in controlling the electric field and therefore the current between source and drain.

In conclusion, the FDMS1D4N03S is a highly capable MOSFET for a wide range of power management applications. Its features, including its low on-state resistance, high breakdown voltage, low operating voltage and low effective mobility, make it well suited for numerous applications. Furthermore, its FDSOI structure offers improved precision in controlling the flow of current between source and drain. As such, it is a great device for both new and existing power management projects.

The specific data is subject to PDF, and the above content is for reference