FDMS9411L-F085

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FDMS9411L-F085 is a field effect transistor (FET) designed and manufactured by Siliconix, Inc. This device is a N-Ch Semi-Depleted Silicon Gate MOSFET device specifically designed for high power applications. It is a single die, hermetically-sealed, silicon-gate insulated-gate field effect transistor.

The FDMS9411L-F085 is unique among other FETs in its design and manufacturing process. It features a single die construction, which means that it is created from a single die from silicon, unlike other FETs which are made from multiple dies. This makes it robust and highly reliable in high power applications. Additionally, the insulation gate field effect transistor ensures higher frequency operation, making it suitable for higher speed switching systems.

The FDMS9411L-F085 can be used in a variety of applications including power supplies, motor drives, uninterruptible power supplies, and audio amplifiers. It offers an ideal solution for power conversion, as it combines high voltage and high current with low power consumption. Additionally, its small size makes it an ideal device for high integration applications, as it can be used to reduce overall system size.

The working principle behind the FDMS9411L-F085 is that it is a voltage controlled switch. When a voltage is applied to the gate, an electric field is produced, which causes electrons to move into the p-type channel region. As more electrons enter the region, the resistance of the channel decreases. This decrease in resistance causes the drain current to increase. By controlling the voltage applied to the gate, the resistance of the channel can be varied, thus controlling the drain current.

For added durability and enhanced performance, the FDMS9411L-F085 is equipped with built-in self-protection circuitry. This circuitry incorporates ESD protection which suppresses transients and surges, as well as a thermal shutdown which shuts down the device at junction temperatures above 150°C. Additionally, the self-protection circuitry provides drain-source short-circuit protection, ensuring protection against accidental short circuit conditions.

Overall, the FDMS9411L-F085 is a high-performance, robust and reliable FET device, which is ideal for high power applications. Its unique single die, insulation gate field effect transistor design makes it well-suited for a variety of applications, and its built-in self-protection circuitry provides additional protection against transients and short circuits. By controlling the voltage applied to the gate, this device can accurately vary its resistance, thus controlling the drain current and providing a versatile solution for power conversion and high integration applications.

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