FDMS86150ET100 Discrete Semiconductor Products

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The FDMS86150ET100 is a high-density, advanced DMOS process technology, monolithic integrated N-channel enhancement mode field effect transistor (FET). It has a drain-to source voltage of 100 volts and a continuous drain current of up to 150 Amperes. It is designed for automotive applications, high-power amplifier, and other high-current applications that require high-power density, low-on-resistance, and high-temperature operation.

Application Fields of FDMS86150ET100

The FDMS86150ET100 is an N-channel enhancement mode FET that is primarily used for high-current and high-power applications. It is commonly used in automotive applications such as motor controllers, power inverters, and automotive lighting applications. It is also suitable for high-power amplifier applications, industrial power controllers, and power supply applications. It provides excellent on-resistance RDS(ON) with low gate charge, making it suitable for high-performance Class-D audio amplifiers, audio/video equipment, and power supply systems that require fast switching capability.

Working Principle of FDMS86150ET100

The FDMS86150ET100 is an N-channel enhancement mode FET. As the name implies, it uses enhancement-mode operation, which means that there must be an external signal applied to the gate terminal in order to switch it on. As the voltage applied to the gate terminal increases, the resistance between the drain and source terminals decreases, allowing current to flow. Likewise, as the gate voltage decreases, the resistance between the drain and source terminals increases, effectively blocking current flow.

It is a depletion mode FET, meaning that the resistance between the drain and source terminals is high when no gate signal is applied. This results in a very low operating current, which makes the FDMS86150ET100 ideal for applications that require high power density, low on-resistance and excellent high-temperature performance.

The FDMS86150ET100 also features a high-speed switching capability and a low gate charge, making it highly suitable for high-performance Class-D audio amplifiers and other applications that require fast switching capabilities. Additionally, it has a low-leakage inductance, meaning it can be used in applications that require high inductive noise immunity.

Conclusion

The FDMS86150ET100 is a high-density, advanced DMOS process technology, monolithic integrated N-channel enhancement mode FET. It is designed for high-current and high-power applications, such as automotive applications, high-power amplifiers, and other applications that require quick switching capabilities. It has a drain-to-source voltage of 100 volts and a continuous drain current of up to 150 Amperes. Additionally, it provides excellent on-resistance RDS(ON) with low gate charge and low-leakage inductance, making it suitable for power supply systems, high-end audio/video equipment and other applications that require noise immunity and high-power density at the same time.

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