FDMS5672 Allicdata Electronics
Allicdata Part #:

FDMS5672TR-ND

Manufacturer Part#:

FDMS5672

Price: $ 0.95
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 10.6A POWER56
More Detail: N-Channel 60V 10.6A (Ta), 22A (Tc) 2.5W (Ta), 78W ...
DataSheet: FDMS5672 datasheetFDMS5672 Datasheet/PDF
Quantity: 2992
1 +: $ 0.95000
10 +: $ 0.92150
100 +: $ 0.90250
1000 +: $ 0.88350
10000 +: $ 0.85500
Stock 2992Can Ship Immediately
$ 0.95
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP (5x6), Power56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMS5672 is a N- and P-channel enhancement mode vertical DMOSFET transistor, manufactured by STMicroelectronics. It is part of their advanced FET family of transistors, and has a maximum drain current of 3.2 A at 20V and a maximum current gain of 130. Its operating temperature range is -55 to +150 degrees Celsius. Additionally, it is RoHS compliant, halogen-free and lead-free.

The FDMS5672 is an enhancement mode vertical DMOSFET transistor, meaning that it is a form of Field Effect Transistor (FET) with Metal Oxide Semiconductor (MOS) technology, which is what makes this particular device so efficient and reliable. An enhancement mode FET is one that is activated when the gate-source voltage is applied, instead of when the gate and the source are shorted together. This makes it especially useful for digital applications that require precise control of a high current load.

The FDMS5672 is an ideal choice for many different types of applications. It is used in electronic stabilization systems (ESC), electronic speed controllers (ESCs), motor control, DC-DC converters, and battery chargers. In particular, it is an excellent choice for power converters due to its low relative on-state resistance and fast switching speed. Additionally, thanks to its low capacitance, the FDMS5672 is also well-suited to high-speed switchers and inverters.

The FDMS5672 has many advantages over other transistors, including its high-current handling capability and robustness, as well as its low on-state resistance and fast switching speed. Additionally, this device boasts a low thermal resistance and excellent surge handling performance. These features make it particularly well-suited for applications that require high temperatures, high current ratings, and fast switching. As a result, this transistor is used in a wide variety of applications, including automotive, industrial, and medical.

The FDMS5672 operates on the principle of a voltage-controlled current source. When the gate voltage is increased, more electrons are attracted to the channel and the current flow increases. Conversely, when the voltage decreases, the current is reduced. This type of device is especially useful in switching applications because it is capable of being switched on and off rapidly, with very little power loss. Additionally, its low capacitance allows it to be used as part of a digitally controlled circuit.

In summary, the FDMS5672 is an efficient, reliable, and rugged single N- and P-channel enhancement mode vertical DMOSFET transistor, that is manufactured by STMicroelectronics and is part of their advanced FET family. It is well-suited for power converters due to its low relative on-state resistance and fast switching speed, and can also be used in automotive, industrial, and medical applications. It operates on the principle of a voltage-controlled current source, and has many advantages over other transistors, including its high-current handling capability, robustness, and low thermal resistance. As a result, it is an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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