FDMS6673BZ

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-PQFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 73W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5915pF @ 15V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	6.8 mOhm @ 15.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	15.2A (Ta), 28A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The FDMS6673BZ is a power integrated circuit (IC) for short channel enhancement mode MOSFETs. It has been designed for high speed, low side switching applications in automotive and industrial power systems. This power IC comes with an optimized structure that provides an excellent diode-to-MOSFET ratio and a wide control bandwidth that ensures high speed operation.The FDMS6673BZ is versatile, can be used in a wide range of applications, and is easy to use. It is most commonly used in high-power switching applications, providing low voltage and current protection in power system protection systems, efficient current sensing and protection in automotive power electronics, and in both high-power and high-efficiency switching applications in industrial power applications.The FDMS6673BZ enables efficient switching of the MOSFET with an optimized low ohmic input to reduce power loss and delivers an extremely high avalanche capability. It features an integrated gate driver, allowing for improved efficiency, low power consumption, and reduced board size. It also features gate, drain and source short circuit protection and is optimized for EMI immunity.The FDMS6673BZ is composed of two MOSFETs, an integrated low side and a high side switch, along with a gate driver. All switches feature an enhancement mode with a low gate voltage and a low on-resistance. The IC includes an enhanced Miller clamp, which reduces losses due to Miller effect and minimizes gate charge while providing a fast switching speed.The FDMS6673BZ works on the principle of MOSFETs. A MOSFET is a type of power semiconductor device which consists of a semiconductor layer, a source electrode and a drain electrode. When a voltage is applied to the gate electrode, it turns on the device, allowing current to flow between the source and drain. This type of device is preferred in high power applications because it is efficient, reliable and fast.The FDMS6673BZ also has several advantages compared to other similar devices. %First, it has an integrated gate driver, allowing for improved efficiency and low power consumption. Second, it has an optimized structure that provides an excellent diode-to-MOSFET ratio and a wide control bandwidth that ensures high speed operation. Third, it features gate, drain and source short circuit protection and is optimized for EMI immunity. Finally, the FDMS6673BZ enables efficient switching of the MOSFET with an optimized low ohmic input to reduce power loss and delivers an extremely high avalanche capability.The FDMS6673BZ is a versatile device that can be used in a wide range of applications. Its primary function is to provide high power switching in automotive and industrial power systems. Its integrated gate driver allows for improved efficiency, low power consumption, and reduced board size, while its optimized structure provides an excellent diode-to-MOSFET ratio and a wide control bandwidth that ensures high speed operation. Additionally, its avalanche capability and short circuit protection make it suitable for a variety of applications, from power system protection to high-efficient switching in industrial power systems.

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