FDMS86102LZ Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-PQFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 69W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1305pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	25 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDMS86102LZ is a p-channel depletion mode field-effect transistor (FET) which has been designed for low voltage, high speed applications. Its excellent reviews have been proven in multiple applications such as audio power amplifiers, analog switches, and wireless communication.This device generally use p-channel and is typically used as a switch to help turn off power at the end of an low-voltage and high-speed applications. More notably, it has a ‘Depletion Mode’ because there is no gate-source voltage required to turn the device “on.” The device has a ‘Logic Level Gates’ because it has a lower threshold voltage which is typically 3.0V. This capability allows the device to work properly with CMOS logic devices.The device operates by having the gate electrode forming a gate-channel, which is between the source and the drain. By having the gate voltage changed, it can allow a change of current flow between the source and the drain from zero through to a certain limited current. The gate voltage changes are needed to switch the device “on” and “off” because its currents are so low.Typical applications for the FDMS86102LZ FET include switching power amplifiers, low-voltage analog multiplexers, analog switches, and certain wireless communication applications. Especially for audio power amplifiers, FDMS86102LZ can act as an amplifier with adjustable parameters, that adjusts the output signal’s frequency based on the input signal’s frequency. This is because the device has a low ON resistance, which minimises power dissipation and keeps high efficiency. Besides, transition frequency can be improved drastically.The typical working principles of the device is that the electric current is allowed to flow between the source and the drain of the device when the voltage between the gate and the source terminal is below a certain cut-off voltage. The voltage at the gate terminal limits the electric current between the source and the drain by creating a channel. There is no need for any external voltage or current source to perform this action.In order to achieve the best results with the FDMS86102LZ, it is important to consider the limitations of the device. The most important limitations are that it can handle up to 3V of voltage and it does not offer the same amount of power as other devices. Also, the device requires a higher voltage for switching, which can limit the switching speed. Additionally, it does not have the same level of capacitive performance as other FETs, which can affect amplification and switching performance.In conclusion, the FDMS86102LZ p-channel Depletion Mode FET has been designed for low voltage, high speed applications. It has been tested and approved in various applications such as audio power amplifiers, analog switches, and wireless communication. It works by having the gate-channel between the source and the drain, which helps to modulate the current. The capacity of FDMS86102LZ is limited but it should be considered when making a device that uses transistors.

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