FDMS86580-F085 Discrete Semiconductor Products

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The FDMS86580-F085 is an advanced semiconductor power device, commonly referred to as a Field Effect Transistor (FET) or a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Released in 2020 by Fairchild Semiconductor, this single source voltage FET is designed to deliver high temperature operation, high breakdown voltage, and high current capability in a small surface-mount package.

In broad terms, FETs are transistor-based devices that use voltage signals to control current flow from the device’s drain to the source. This three-terminal, unipolar device consists of an insulated gate, a source, and a drain. The FDMS86580-F085 device is an N-channel FET in which current flow is controlled by a negative gate-to-source voltage (VGS). FETs allow current to flow between the source and drain when a voltage is applied to the gate, activating a channel beneath the gate.

The FDMS86580-F085 is a surface-mount package, with a body dimension of 6x3x0.45mm, making it suitable for use in applications with limited space. This device has a 0.2W power dissipation and a maximum junction temperature of 125°C. With a drain-to-source breakdown voltage (VDS) of 880V, the FDMS86580-F085 offers high voltage resistance as well as high current capability (IDss=65A). The device also features a VOS Rating of 10mV (maximum).

Due to its solid characteristics, the FDMS86580-F085 device is ideal for applications such as DC-DC converters, solar inverters, and motor drive controllers, as well as other applications where low on-state resistance (RDS) is needed. In addition, this device can be used in the protection of IGBTs in some applications.

In overview, the FDMS86580-F085 has a wide range of features and advantages that make it an efficient and reliable choice for applications that require low on-state resistance and high current capability. This device also offers high temperature operation and high breakdown voltage, as well as an extremely small footprint.

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