Allicdata Part #: | FQPF28N15T-ND |
Manufacturer Part#: |
FQPF28N15T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 16.7A TO-220F |
More Detail: | N-Channel 150V 16.7A (Tc) 60W (Tc) Through Hole TO... |
DataSheet: | FQPF28N15T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 8.35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.7A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF28N15T is a high-power N-channel MOSFET transistor with a super low on-resistance. It is one of the most common types of transistors available in the market and is widely used in a variety of applications since it features low gate charge and low gate-to-drain capacitance. In this article, we will discuss the applications of the FQPF28N15T and its working principle.
(i) FQPF28N15T Applications:
The FQPF28N15T is used in a number of consumer and industrial applications, including:
- High-power switching applications
- High-frequency power switching in consumer electronic devices such as televisions and audio/video equipment
- Switching voltage regulator circuits
- High-frequency motor control circuits
- Eliminating the effects of inductive kickback on induction motors
- Power amplifiers
(ii) FQPF28N15T Working Principle:
The FQPF28N15T is a MOSFET transistor which consists of four layers: a source, a drain, a gate, and a substrate. The source and drain are both p-type dopants while the gate is a metal gate with an oxide insulation. When the gate voltage is applied, it creates a channel between the source and the drain. This channel allows the carriers (electrons or holes depending on the type of device) to flow from the source to the drain.
When a small voltage is applied to the gate, a large conducting channel is created between the source and drain. This causes electrons to flow from the source to the drain and results in a large drain current. The current flowing through the drain can be controlled by the voltage applied to the gate. This is known as the "enhancement-mode" operation and is the most common type of MOSFET used in most applications.
The FQPF28N15T also has an extremely low input capacitance which is important when considering high-efficiency switching applications. The low on-resistance of this device is also ideal for low-power applications. Furthermore, the excellent temperature performance of the FQPF28N15T makes it suitable for operation over a wide temperature range.
In summary, the FQPF28N15T is an ideal device for high-efficiency switching applications as it has low input capacitance and low on-resistance. It is widely used in consumer and industrial applications, and its excellent temperature performance makes it suitable for operation over a wide temperature range.
The specific data is subject to PDF, and the above content is for reference
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