FQPF28N15T Allicdata Electronics
Allicdata Part #:

FQPF28N15T-ND

Manufacturer Part#:

FQPF28N15T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 16.7A TO-220F
More Detail: N-Channel 150V 16.7A (Tc) 60W (Tc) Through Hole TO...
DataSheet: FQPF28N15T datasheetFQPF28N15T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 90 mOhm @ 8.35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQPF28N15T is a high-power N-channel MOSFET transistor with a super low on-resistance. It is one of the most common types of transistors available in the market and is widely used in a variety of applications since it features low gate charge and low gate-to-drain capacitance. In this article, we will discuss the applications of the FQPF28N15T and its working principle.

(i) FQPF28N15T Applications:

The FQPF28N15T is used in a number of consumer and industrial applications, including:

  • High-power switching applications
  • High-frequency power switching in consumer electronic devices such as televisions and audio/video equipment
  • Switching voltage regulator circuits
  • High-frequency motor control circuits
  • Eliminating the effects of inductive kickback on induction motors
  • Power amplifiers

(ii) FQPF28N15T Working Principle:

The FQPF28N15T is a MOSFET transistor which consists of four layers: a source, a drain, a gate, and a substrate. The source and drain are both p-type dopants while the gate is a metal gate with an oxide insulation. When the gate voltage is applied, it creates a channel between the source and the drain. This channel allows the carriers (electrons or holes depending on the type of device) to flow from the source to the drain.

When a small voltage is applied to the gate, a large conducting channel is created between the source and drain. This causes electrons to flow from the source to the drain and results in a large drain current. The current flowing through the drain can be controlled by the voltage applied to the gate. This is known as the "enhancement-mode" operation and is the most common type of MOSFET used in most applications.

The FQPF28N15T also has an extremely low input capacitance which is important when considering high-efficiency switching applications. The low on-resistance of this device is also ideal for low-power applications. Furthermore, the excellent temperature performance of the FQPF28N15T makes it suitable for operation over a wide temperature range.

In summary, the FQPF28N15T is an ideal device for high-efficiency switching applications as it has low input capacitance and low on-resistance. It is widely used in consumer and industrial applications, and its excellent temperature performance makes it suitable for operation over a wide temperature range.

The specific data is subject to PDF, and the above content is for reference

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