Allicdata Part #: | FQPF7N10L-ND |
Manufacturer Part#: |
FQPF7N10L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 5.5A TO-220F |
More Detail: | N-Channel 100V 5.5A (Tc) 23W (Tc) Through Hole TO-... |
DataSheet: | FQPF7N10L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 23W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 2.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF7N10L is a type of Field-Effect Transistor (FET) that is a member of the family of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). It is a single FET, meaning that it has a single region between the source and drain, thus allowing it to control the flow of current between them. The FET is also known as a voltage-controlled device, since the gate voltage is used to control the current. In this way, the FET can be used to regulate power in applications such as amplifiers and power supplies, as well as for switching applications, where the current must be switched on or off depending on the application.
The FQPF7N10L FET has a number of features that make it ideal for a wide range of applications. It has a high voltage rating of 1000 volts and a high current rating of 60Amps. The device also has a low on-state resistance, which allows for efficient power transfer. Additionally, it has a high switching speed, meaning that it can be used for high-frequency applications such as switching power supplies, power amplifiers and other high-speed applications.
The FQPF7N10L FET works on the basis of a Field-Effect mechanism. The gate region of the device is typically composed of a metal-oxide-semiconductor (MOS) layer. This MOS layer is used to control the flow of current between the source and the drain. When a voltage is applied to the gate region, the electric field that is created between the source and the gate allows for the flow of current between them, thus controlling the current in the circuit. This allows for a variety of applications such as switching, controlling power in amplifiers and power supplies, and other applications.
The FQPF7N10L FET is also useful in a variety of applications due to its high current and voltage ratings, low on-state resistance, and high switching speed. It can be used in high-power applications, such as power amplifiers; switching applications, such as in power supplies and signal conditioning; and high-frequency applications, such as high-speed data converters and switching power supplies. Additionally, the device can be used to create efficient controls for a variety of applications, since it can easily switch on and off currents depending on the signal received.
In conclusion, the FQPF7N10L FET is a versatile device that can be used in a variety of applications due to its high voltage and current ratings, low on-state resistance, and high switching speed. The device works on the basis of a Field-Effect mechanism, which allows for efficient control over current flow in the circuit. The device can be used in high-power applications, switching applications, and high-frequency applications, making it ideal for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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