FQPF4N60

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The FQPF4N60 is a Power MOSFET, which is commonly used for switching applications and power supplies. It is a high-voltage device, usually 60 to 1000 volts, and is designed for low to medium power handling applications. This device is a single-gate, four-polar unit with a power dissipation of up to 20 watts.

In the FQPF4N60 the power MOSFET is combined with an insulated-gate field-effect transistor (IGFET). The combination of MOSFET and IGFET in one package has resulted in power handling and thermal characteristics significantly better than those found in traditional discrete devices. This device is well suited to use in applications with high switching speeds, low on-resistance, and low gate drive power.

Application Field

The FQPF4N60 can be used in various applications such as:

• DC-DC converter circuits
• SMPS applications
• Automotive electronics
• Load switch applications
• Switching core power module
• LED lighting systems.

It has been designed to be a reliable device for applications that require high current, low on-resistance, and high frequency switching.

Working Principle

The FQPF4N60 is a voltage-controlled power MOSFET. It uses a gate-to-source voltage to control the current flowing from the drain to the source. FETs are different than BJTs (Bipolar Junction Transistors) because it is voltage that is used to control current rather than current as with BJTs. The advantage of FETs is that they require less current to control the device and also provide a low input capacitance. This device can be used in various applications by controlling the source voltage of the FET.

In the FQPF4N60, when the gate voltage of the MOSFET is more than the source voltage, the device conducts. During conduction, the drain-source voltage drops due to the internal resistance of the device. At the same time, the gate-source voltage increases due to the gate-drain capacitance of the device. As a result, the channel is opened as long as the gate-source voltage is higher than the source voltage of the device.

The gate-source voltage increases with the increase in the drain-source current, up to the point when the gate-source voltage exceeds the threshold voltage of the FET or the breakdown voltage of the FET is reached. At this point, the channel is closed and a steady state is reached. The FQPF4N60 is usually used at the steady state point.

The FQPF4N60 can also be used as an inverter, where the thresholds are used to control the state of the gate. The threshold voltage and the gate-source voltage are used as the inputs and low and high switching levels are output. Therefore, the device can be used to switch between two states.

In summary, the FQPF4N60 is a reliable, efficient and easy to use device that can be used in numerous applications with high frequency switching, high current, and low on-resistance. It works by using a gate-to-source voltage to control the current flow in the device, allowing for an efficient and swift switch between two states.

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