Allicdata Part #: | FQPF10N60CYDTU-ND |
Manufacturer Part#: |
FQPF10N60CYDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 9.5A TO-220F |
More Detail: | N-Channel 600V 9.5A (Tc) 50W (Tc) Through Hole TO-... |
DataSheet: | FQPF10N60CYDTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2040pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 730 mOhm @ 4.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF10N60CYDTU is a single N-channel MOSFET (Metal-Oxide Field-Effect Transistor) which belongs to a larger family of devices known as FETs (Field-Effect Transistors). As its name implies, a FET is something that is used to regulate an electric current through a semiconductor medium relying on an electric field, which is why these powerful devices are also known as voltage-controlled transistors. One of the advantages of FETs is that they can be used to control large currents with a very small control signal. This makes them ideal for applications where a large output signal needs to be regulated with a small control signal, such as in the FQPF10N60CYDTU. In the FQPF10N60CYDTU, the electric fields are used to control the current flow in two ways, namely through voltage-controlled source and drain regions. The source region is placed close to the gate of the transistor, while the drain is located at a farther distance. These two regions behave in a similar way as two resistors: when there is no gate voltage applied, the device is in its off state, meaning there is very little current flowing between the source and drain. However, when a gate voltage is applied to the FQPF10N60CYDTU, electrons will start to flow from the source to the drain, resulting in a conduction path from the source to the drain. This flow of electrons will depend on the amount of gate bias applied and when it reaches the threshold voltage, which is determined by the voltage of the gate, the channel will start to conduct, thus making the transistor turn on and allowing current to flow between the source and drain. The working principle of FETs make them ideal for use in many different kinds of applications, such as power control, switching, amplifying, and noise control. In particular, the FQPF10N60CYDTU MOSFET is mainly used for power switching and amplifying operations. It is also often used in power supply applications where it can provide tight voltage and current regulation, since the amount of current flowing between the source and drain is directly proportional to the amount of gate bias applied. Apart from this, the FQPF10N60CYDTU finds application in soft start circuits, which serve the purpose of gradually increasing the supply voltage during the start-up of an electronic device. This reduces the inrush current and prevents the instant generation of high voltage, which in turn prevents any kind of damage or harm to the device. Furthermore, this MOSFET can also be used in motor control circuits, where it can be used to modulate the variation of the motor speed.In short, the FQPF10N60CYDTU MOSFET is a powerful single N-channel device that is used in various applications, including power control, switching, amplifying, noise control, and so on. Its voltage-controlled source and drain regions allow it to be used in soft start and motor control circuits, where it provides tight voltage and current regulation. In addition, the FQPF10N60CYDTU is widely used for a variety of power switching and amplifying operations.
The specific data is subject to PDF, and the above content is for reference
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