FQPF5N60C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQPF5N60C Application Field and Working Principle

The FQPF5N60C is a fifth-generation field-effect transistor (FET) produced by Fairchild Semiconductor, a premier developer of power management, analog, and discrete semiconductor solutions. It is a discrete, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage operation, offering robust performance with excellent secure operation in both linear and pulse-switching applications.

The FQPF5N60C belongs to Fairchild\'s fifth-generation PowerTrench™ MOSFETs, which are designed to provide ultra-low on-resistance, low gate charge and low gate-to-drain leakage current. FQPF5N60C is a single-die, N-channel, high-performance MOSFET that offers high voltage capability and a wide temperature range of -55°C to +155°C. It has a maximum drain-source voltage (Vds) of 600V, a rating of 150V at the gate-source voltage (Vgs) and a maximum drain current (Id) of 5A. The FQPF5N60C is housed in a power-dense, thermally efficient, surface-mount TO-252AC package, making it a popular choice for high-switching frequency, high-efficiency power conversion applications.

As a high voltage MOSFET, the FQPF5N60C is used mostly in applications such as DC-DC converters, motor drivers, electric vehicle charging stations, power tools, electric heaters, consumer and industrial appliances and lighting systems. The high voltage capability and low on-resistance coupled with low gate charge and improved Avalanche energy makes it ideal for high-efficiency and high-power density power systems. It is also very suitable for switching applications in power circuits as well as for integrating into gate driver and motor drive circuits.

Working Principle

At the heart of the FQPF5N60C is a single-die, N-channel MOSFET that is operated by a gate-to-source voltage applied between the gate and the source electrodes. The FQPF5N60C\'s performance characteristics, such as the threshold voltage, drain-source voltage breakdown and drain current are determined by the gate voltage applied. When a voltage is applied between the gate and the source, it produces an electric field which affects the amount of electrons stored in the MOSFET\'s gate, in turn dictating the current flowing between the drain and the source. Therefore, one can control the operation of the FQPF5N60C MOSFET by controlling the gate voltage.

When the gate voltage is less than the threshold voltage, the FQPF5N60C is said to be in the OFF state. The threshold voltage is typically around 2V. In this state, almost no amount of current is passed from the drain to the source terminals, so the device is considered to be in a non-conductive state.

When the applied gate voltage reaches and exceeds the threshold voltage, the FQPF5N60C is in the ON state. In this case, the drain-source path is conductive and current is allowed to pass through. The amount of current allowed to pass is determined by the applied gate voltage. As the gate voltage increases, the drain current increases. However, it reaches a saturation point beyond which no further increase in the drain current is observed. The saturation point is typically around 5V.

The FQPF5N60C also has a unique feature of Avalanche energy which makes it suitable for radio frequency, high switching frequency, and high-efficiency power conversion applications. This feature actually allows the device to absorb and safely dissipate higher than normal energy levels and prevents the device from failing.

Overall, the FQPF5N60C is an excellent choice for high-power density and high-efficiency power designs, offering robust performance and secure operation in both linear and pulse-switching applications.

The specific data is subject to PDF, and the above content is for reference