FQPF5N20L

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FQPF5N20L devices are advanced power MOSFETs designed using the latest generation of high voltage process technology. This device, which can operate at up to 900 volts and can improve switching performance, is suitable for both high-side and low-side applications. In addition, the maximum on-resistance of the device is very low compared to the conventional power MOSFETs.

FQPF5N20L is suitable for switching applications, such as motor control, overvoltage protection, and rectifiers. It is mainly used in high side and low side of applications. It is also suitable for switching appliances such as light dimmers, LED lights, and AC-DC power supplies.

FQPF5N20L devices combine excellent gate charge performance with a low on-resistance. The high current capability of these devices and their ability to reduce switching losses makes them an ideal choice for high-power applications. The low on-resistance also helps reduce dissipation and heat generation.

The operating and general specific characteristics of the FQPF5N20L are outlined below:

• Operating voltage: 900V
• Maximum Drain current: 16A
• Maximum Junction Temperature: 175°C
• Maximum Drain-Source Voltage: 18V
• On-Resistance: 0.022 Ohms

The working principle of FQPF5N20L is based on the breakdown voltage applied to the Drain-Source junction. When the voltage applied to the draining-source exceeds the breakdown voltage, the MOSFET is turned on. The gate controls the electric field between the drain and the source, and when the voltage applied to the gate is increased, the electric field increases, allowing current between the drain and the source.

The change in the gate voltage can affect the channel current, and the channel current limits the drain-source current. When the drain-source voltage is less than the breakdown voltage, the voltage on the gate must be greater than the threshold voltage for the FET to conduct current. The FET can be turned off by reducing the voltage on the gate to less than the threshold voltage.

In addition to its basic function, the FQPF5N20L can also be used as a switch to regulate the output voltage and current. This is done by controlling the pulse width modulation (PWM) of the gate voltage to increase or decrease the voltage and/or current. The PWM can be used to regulate the voltage and/or current according to the demand.

In conclusion, FQPF5N20L is an advanced power MOSFET designed using the latest generation of high voltage process technology. It is suitable for switching applications, high side and low side applications, and can be used to regulate the output voltage and current. Its low on-resistance and high current capability makes it suitable for high power applications.

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