Allicdata Part #: | FQPF9N90CT-ND |
Manufacturer Part#: |
FQPF9N90CT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 8A TO-220F |
More Detail: | N-Channel 900V 8A (Tc) 68W (Tc) Through Hole TO-22... |
DataSheet: | FQPF9N90CT Datasheet/PDF |
Quantity: | 613 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 68W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2730pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Introduction to FQPF9N90CT
The FQPF9N90CT is a high performance off-the-shelf MOSFET device designed and manufactured by Fairchild Semiconductor. The FQPF9N90CT is built using the company\'s advanced high power technology, making it suitable for a wide range of industrial and commercial applications. Its main applications include solenoid valves, motor controllers, switch-mode power supplies and other high current applications.
Application Field
The FQPF9N90CT is primarily used for switching and power control applications, such as those found in motor control and switch-mode power supply applications. It can also be used in amplifier circuits, analog-digital converters and DC-DC converters. The device is designed to be used in conjunction with other components, such as rectifiers and schottky diodes, to ensure safe and reliable operation.
The FQPF9N90CT has been specifically designed for applications that require high power, high current and fast switching speeds. It is suitable for a wide range of applications including automotive electronic controls, robotics, home appliances and medical instruments. The device is robust and reliable and is available in a variety of packages, such as TO-220, D2PAK, DPAK and SOT-223, allowing it to fit into any design.
Working Principle
The FQPF9N90CT is a field effect transistor (FET). A FET is an electronic component that consists of a gate, source and drain. In operation, a current flowing between source and drain is controlled by the voltage applied to the gate. This voltage can be either positive or negative. When the voltage is positive, carriers within the channel are attracted to the gate, thus allowing current to flow; when the voltage is negative the gate repels the carriers, thus reducing the flow of current.
The FQPF9N90CT is an enhancement-mode device, which means that when no gate voltage is applied, a high-impedance state is established and no current flows. The device is constructed with a metal oxide semiconductor (MOS) gate insulation layer, allowing it to support higher levels of gate-source voltage. This ensures that the device is capable of withstanding high levels of voltage, making it suitable for a range of applications.
The FQPF9N90CT is a highly efficient and durable device, making it ideal for a variety of power control and electronic switch applications. Its fast switching speeds and excellent reliability make it suitable for mission critical applications, such as those found in automotive and aircraft systems.
The specific data is subject to PDF, and the above content is for reference
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