Allicdata Part #: | FQPF13N50-ND |
Manufacturer Part#: |
FQPF13N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 12.5A TO-220F |
More Detail: | N-Channel 500V 12.5A (Tc) 56W (Tc) Through Hole TO... |
DataSheet: | FQPF13N50 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 6.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF13N50 is a Field Effect Transistor (FET) that uses Metal Oxide Semiconductor (MOS) technology, making it a MOSFET. It can switch electric current in a single direction, with the electric charge on its gate controlling the source and drain. The FQPF13N50 has an Insulated Gate Bipolar Transistor (IGBT) built in, and utilizes an advanced power cycling technique.
The optimized design and structure of the FQPF13N50 makes it ideal for a wide range of applications, such as lighting, heating, and motor control, as well as general switching and power transfer. It is also used in power supplies and audio systems, thanks to its low on-resistance, low gate charge, and reliable operation. Additionally, its low profile and easily operable lead-free terminals make it ideal for space-saving designs.
The FQPF13N50 has a 300 Volt blocking capability, a 2 A (amp) continuous drain current, and a 13.3 A pulse drain current. It can also withstand up to 0.2 ohms of on-resistance, making it highly efficient in comparison to similar devices. Furthermore, its total gate charge is 17 nC and it has a maximum switching frequency of 100 KHz.
In terms of its functionality, the FQPF13N50 works by controlling the electric charge on its gate. The more electric charge that is applied, the higher the voltage that will be generated between the source and drain. This in turn will determine the current that is passed through the device. In other words, the higher the gate charge, the higher the current. This is the basic principle of operation of the FQPF13N50.
In terms of safety and reliability, the FQPF13N50 is designed with over-current, over-voltage, and over-temperature protection. In addition, it has ESD protection of up to 16kV to minimize the risk of electrostatic discharge, and a high-quality isolation layer to reduce the risk of damage from external sources. Furthermore, its high-temperature resistant soldering ensures reliability, even in the most extreme environments.
Overall, the FQPF13N50 is an ideal choice for applications where switching, power transfer, and reliability are critical requirements. Thanks to its advanced design, it offers highly efficient performance, low on-resistance, and reliable operation in a wide range of applications. Additionally, its advanced protection systems make it safe and reliable in the most extreme environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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