FQPF13N50CSDTU

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	48W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2055pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	56nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	480 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The FQPF13N50CSDTU is a discrete field-effect transistor (FET) suitable for switching and amplifying electronic signals. It is a single, insulated gate bipolar transistor (IGBT) device, typically used in mobile phones, digital cameras and other portable electronics. As such, its use has become increasingly widespread in the consumer electronics industry. FQPF13N50CSDTU transistors are designed to operate in a certain temperature range with efficient and optimal performance. Operating temperature ranges of -25°C to +85°C and higher are common. FQPF13N50CSDTU transistors also have built-in current-sense and temperature-sense circuits to help protect against over-voltage and thermal runaway conditions. FQPF13N50CSDTU transistors have excellent switching performance with high frequency operation and fast turn-on/turn-off times. They are also designed to handle high current loads (over 8 Amps) and withstand high voltages (up to 500 Volts). As such, FQPF13N50CSDTU transistors are ideal for applications that require a high level of efficiency and speed. The FQPF13N50CSDTU also features an insulated MOS gate and Leaded PN-junction Schottky diode (LPSD), which offer significant energy savings. This technology prevents direct and indirect switching losses, resulting in improved efficiency and decreased power consumption. The built-in protective features also provide additional protection from ESD and reverse bias, protecting the IC from damage. The working principle of the FQPF13N50CSDTU involves a field effect, where the controlled current conducts across an insulated gate region. In operation, a voltage potential is applied to the gate region, causing electrons to flow through the insulated channel, resulting in conduction of current through the device. This channel is capable of carrying high levels of current and provides excellent switching performance. The insulated gate also provides an additional layer of protection against over-voltage and thermal runaway conditions. FQPF13N50CSDTU transistors offer a wide range of applications in mobile phones, digital cameras and other portable electronics. These transistors are ideal for switching and amplifying electronic signals, as they are capable of providing high levels of efficiency and speed. The insulated gate and LPSD also provide additional protection from ESD and reverse bias, making them a reliable choice for use in a variety of applications.

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