FQPF17N40

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FQPF17N40 is a field effect transistor (FET) manufactured by Fairchild Semiconductor, designed for use in a wide range of applications. The FQPF17N40 is the latest version of Fairchild’s third generation MOSFET technology and is ideal for high current (up to 24A) applications where space is of premium concern. This makes it ideal for switching applications in automotive and industrial applications.

The FQPF17N40 offers several features that set it apart from other MOSFET transistors. Its high frequency capability makes it great for high speed switching applications. Its low on-state resistance (RDS(on)) improves system efficiency and reduces circuit costs. Its low gate charge allows rapid switching speeds and requires less input power than other transistors. The FQPF17N40 also offers fast body diode recovery times and excellent thermal characteristics.

The FQPF17N40 is available in TO-220, D2PAK and D2PAK-7 packages, suited for a wide range of applications. It is designed for use in applications such as high-speed switching, audio amplifiers, inverters, DC-DC converters, and power supply circuits. It is especially well suited for circuits such as those found in motor drives, video switching and PWM, low- and high-side switching and lighting applications.

The FQPF17N40 makes use of a three-terminal vertical DMOS (V-FET) construction, meaning that it can be driven directly from low voltage logic. It provides low on-state resistance and excellent switching characteristics in a relatively small package. When a gate-source voltage is applied to the FQPF17N40, a field effect is created in the channel between the drain and source, resulting in conduction between them. In order for the current to be interrupted, the gate voltage must be brought to the threshold voltage of the transistor.

The FQPF17N40 is typically used in a three-terminal configuration, however, it may also be used in a source-follower configuration. In order for the FQPF17N40 to operate in this configuration, the gate must be electrically isolated from the source. A single gate resistor is often used to achieve this and also helps to reduce parasitic inductance.

The FQPF17N40 is an ideal choice for high current, high speed switching applications, thanks to its high-frequency capability, low on-state resistance, low gate charge, and fast body diode recovery times. Its V-FET construction makes it perfect for low voltage logic applications, and its relatively small size makes it ideal for a wide range of applications. Its excellent switching characteristics, low on-state resistance, and wide operating temperature range make it an ideal choice for automotive and industrial applications.

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